G11C 11/16
Using elements in which the storage effect is based on magnetic spin
Official title: using elements in which the storage effect is based on magnetic spin effect
G11C11/16 (Using elements in which the storage effect is based on magnetic spin) appears on 9,190 US grants and 9,784 published applications in this corpus.
Search patents in G11C- Granted patents
- 9,190
- Published applications
- 9,784
- Assignees
- 841
- Inventors
- 6,893
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 4 | 0 |
| 1995 | 3 | 0 |
| 1996 | 4 | 0 |
| 1997 | 10 | 0 |
| 1998 | 22 | 0 |
| 1999 | 24 | 0 |
| 2000 | 34 | 0 |
| 2001 | 37 | 23 |
| 2002 | 95 | 125 |
| 2003 | 150 | 174 |
| 2004 | 212 | 303 |
| 2005 | 246 | 356 |
| 2006 | 256 | 282 |
| 2007 | 226 | 260 |
| 2008 | 198 | 288 |
| 2009 | 218 | 293 |
| 2010 | 244 | 382 |
| 2011 | 318 | 336 |
| 2012 | 331 | 413 |
| 2013 | 393 | 426 |
| 2014 | 460 | 508 |
| 2015 | 503 | 525 |
| 2016 | 589 | 537 |
| 2017 | 601 | 500 |
| 2018 | 443 | 461 |
| 2019 | 613 | 632 |
| 2020 | 625 | 674 |
| 2021 | 536 | 535 |
| 2022 | 450 | 469 |
| 2023 | 400 | 423 |
| 2024 | 410 | 329 |
| 2025 | 349 | 318 |
| 2026 | 182 | 212 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Fe-x templating layers for growth of perpendicularly magnetized Heusler films on top of a tunnel barrier6 Oct 2026US 12,755,770 B2Samsung Electronics Co., Ltd.
- Multilevel antiferromagnetic memory device29 Sep 2026US 12,749,519 B2Kioxia Corporation
- Bipolar decoders for nonvolatile memory with spike attenuation for threshold selector switches29 Sep 2026US 12,749,520 B2SanDisk Technologies LLC
- MRAM device with tunnel barrier overhang29 Sep 2026US 12,751,211 B2International Business Machines Corporation
- Magnetic memory device having magnetic tunnel junction patterns and spin-orbit torque lines22 Sep 2026US 12,744,068 B2Samsung Electronics Co., Ltd.
- Voltage regulators with shared decoupling capacitor for memory devices8 Oct 2026US 2026/0310251 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Controlling the output of a probabilistic-bit spintronic device8 Oct 2026US 2026/0311735 A1Centre National De La Recherche Scientifique
- Multi-level memristor elements8 Oct 2026US 2026/0313913 A1Cirrus Logic International Semiconductor Ltd.
- Midpoint sensing reference generation for stt-mram1 Oct 2026US 2026/0301788 A1Everspin Technologies, Inc.
- Memory system1 Oct 2026US 2026/0301789 A1Aisin Corporation
Most cited
By later US patents
- Magnetic device with optimized heat confinement1,021US 8,411,500 B2Crocus Technology SA · 2013
- Magnetic memory array using magnetic tunnel junction devices in the memory cells768US 5,640,343 AInternational Business Machines Corporation · 1997
- Semiconductor signal processing device422US 8,274,841 B2Renesas Electronics Corporation · 2012
- Electronic device using magnetic components385US 5,695,864 AInternational Business Machines Corporation · 1997
- Magnetic tunnel junctions with controlled magnetic response321US 5,650,958 AInternational Business Machines Corporation · 1997