G11C 11/02
Digital stores characterised by the use of particular electric or magnetic storage
Official title: using magnetic elements
G11C11/02 (Digital stores characterised by the use of particular electric or magnetic storage) appears on 10,154 US grants and 10,579 published applications in this corpus.
Search patents in G11C- Granted patents
- 10,154
- Published applications
- 10,579
- Assignees
- 947
- Inventors
- 7,495
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 9 | 0 |
| 1977 | 15 | 0 |
| 1978 | 5 | 0 |
| 1979 | 4 | 0 |
| 1980 | 9 | 0 |
| 1981 | 4 | 0 |
| 1982 | 5 | 0 |
| 1983 | 3 | 0 |
| 1984 | 4 | 0 |
| 1985 | 5 | 0 |
| 1986 | 3 | 0 |
| 1987 | 2 | 0 |
| 1988 | 6 | 0 |
| 1989 | 7 | 0 |
| 1990 | 4 | 0 |
| 1991 | 7 | 0 |
| 1992 | 7 | 0 |
| 1993 | 5 | 0 |
| 1994 | 13 | 0 |
| 1995 | 9 | 0 |
| 1996 | 10 | 0 |
| 1997 | 19 | 0 |
| 1998 | 35 | 0 |
| 1999 | 36 | 0 |
| 2000 | 46 | 0 |
| 2001 | 69 | 27 |
| 2002 | 128 | 173 |
| 2003 | 197 | 236 |
| 2004 | 277 | 425 |
| 2005 | 346 | 465 |
| 2006 | 350 | 356 |
| 2007 | 290 | 333 |
| 2008 | 253 | 359 |
| 2009 | 257 | 342 |
| 2010 | 294 | 419 |
| 2011 | 361 | 353 |
| 2012 | 369 | 425 |
| 2013 | 417 | 435 |
| 2014 | 473 | 525 |
| 2015 | 520 | 533 |
| 2016 | 602 | 543 |
| 2017 | 609 | 512 |
| 2018 | 452 | 476 |
| 2019 | 624 | 642 |
| 2020 | 632 | 681 |
| 2021 | 544 | 541 |
| 2022 | 453 | 476 |
| 2023 | 410 | 431 |
| 2024 | 416 | 335 |
| 2025 | 355 | 322 |
| 2026 | 184 | 214 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- G11C 11/16Using elements in which the storage effect is based on magnetic spin9,190
- G11C 11/14Using thin-film elements1,587
- G11C 11/06Using single-aperture storage elements57
- G11C 11/04Using storage elements having cylindrical form23
- G11C 11/10Using multi-axial storage elements7
- G11C 11/08Using multi-aperture storage elements6
- G11C 11/12Using tensors3
Recent patents
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- Magnetic memory device having magnetic tunnel junction patterns and spin-orbit torque lines22 Sep 2026US 12,744,068 B2Samsung Electronics Co., Ltd.
- Voltage regulators with shared decoupling capacitor for memory devices8 Oct 2026US 2026/0310251 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Controlling the output of a probabilistic-bit spintronic device8 Oct 2026US 2026/0311735 A1Centre National De La Recherche Scientifique
- Multi-level memristor elements8 Oct 2026US 2026/0313913 A1Cirrus Logic International Semiconductor Ltd.
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Most cited
By later US patents
- Magnetic device with optimized heat confinement1,021US 8,411,500 B2Crocus Technology SA · 2013
- Magnetic memory array using magnetic tunnel junction devices in the memory cells768US 5,640,343 AInternational Business Machines Corporation · 1997
- Molecular wire crossbar memory590US 6,128,214 AHewlett-Packard Company · 2000
- Heterogeneous display elements and methods for their fabrication562US 6,241,921 B1Massachusetts Institute of Technology · 2001
- Semiconductor signal processing device422US 8,274,841 B2Renesas Electronics Corporation · 2012