G11C 11/10
Using multi-axial storage elements
Official title: using multi-axial storage elements
G11C11/10 (Using multi-axial storage elements) appears on 7 US grants and 7 published applications in this corpus.
Search patents in G11C- Granted patents
- 7
- Published applications
- 7
- Assignees
- 7
- Inventors
- 14
- Latest grant
- 13 May 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 1 |
| 2006 | 1 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 1 |
| 2010 | 0 | 0 |
| 2011 | 0 | 1 |
| 2012 | 1 | 2 |
| 2013 | 3 | 0 |
| 2014 | 0 | 0 |
| 2015 | 0 | 0 |
| 2016 | 0 | 0 |
| 2017 | 0 | 0 |
| 2018 | 0 | 0 |
| 2019 | 0 | 0 |
| 2020 | 0 | 0 |
| 2021 | 0 | 0 |
| 2022 | 0 | 0 |
| 2023 | 0 | 0 |
| 2024 | 0 | 1 |
| 2025 | 1 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
- Nanomagnetic data storage and processing devices13 May 2025US 12,302,586 B2Hanberry LLC
- Charge equilibrium acceleration in a floating gate memory device via a reverse field pulse24 Sep 2013US 8,542,531 B2Intel Corporation
- Non-volatile semiconductor memory device26 Feb 2013US 8,385,119 B2Kabushiki Kaisha Toshiba
- Nonvolatile memory device and system, and method of programming a nonvolatile memory device15 Jan 2013US 8,355,279 B2Samsung Electronics Co., Ltd.
- Semiconductor memory device having a block decoder for preventing disturbance from unselected memory blocks17 Apr 2012US 8,159,883 B2Hynix Semiconductor Inc.
- Nanomagnetic data storage and processing devices17 Jul 2025US 2025/0234557 A1Hanberry LLC
- Nanomagnetic data storage and processing devices3 Oct 2024US 2024/0334711 A1Hanberry LLC
- Non-volatile semiconductor memory device5 Jan 2012US 2012/0002472 A1Kabushiki Kaisha Toshiba
- Charge equilibrium acceleration in a floating gate memory device via a reverse field pulse5 Jan 2012US 2012/0002482 A1Intel Corporation
- Nonvolatile memory device and system, and method of programming a nonvolatile memory device31 Mar 2011US 2011/0075478 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Inductive device having orthogonal windings38US 4,210,859 ATechnion Research & Development Foundation Limited · 1980
- Energy storing memory circuit9US 7,042,789 B2Infineon Technologies AG · 2006
- Nonvolatile memory device and system, and method of programming a nonvolatile memory device8US 8,355,279 B2Samsung Electronics Co., Ltd. · 2013
- Charge equilibrium acceleration in a floating gate memory device via a reverse field pulse7US 8,542,531 B2Intel Corporation · 2013
- Semiconductor memory device having a block decoder for preventing disturbance from unselected memory blocks3US 8,159,883 B2Hynix Semiconductor Inc. · 2012