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US 12,749,520 B2Granted
Bipolar decoders for nonvolatile memory with spike attenuation for threshold selector switches
AssigneeSanDisk Technologies LLC
InventorsNicolas Irizarry, Nathan Franklin, Ward Parkinson, Jaydip Patel
Life of this patent
Estimating the term…
Abstract
For MRAM and other memory cell technologies that use threshold selector switches such as ovonic threshold switches, when accessing a selected memory cell, such as for a read, the voltage across the memory cell needs to be sufficient to turn on the threshold selector switch. This results in a current spike that can damage the memory cell and disturb a data value written in it. To reduce such spikes, the local select switches biasing to the selected word line and selected bit line can be biased to limit the current flow from the decoding circuitry when the threshold selector switch turns on.
Claims20
A nonvolatile memory device, comprising:
- a control circuit configured to connect to an array including a plurality of nonvolatile memory cells each having a threshold switching selector, the array having a cross-point structure in which each of the memory cells is connected between a corresponding one of a plurality of bit lines and a corresponding one of a plurality word lines, the control circuit comprising:
- a bipolar bit line decoder configured to connect to the array to selectively bias a corresponding bit line of a selected memory cell to one of a positive voltage level or a negative voltage level, the bipolar bit line decoder comprising:
- a plurality of bit line local negative select switches each configured to supply a negative voltage level to the corresponding bit line of the selected memory cell;
- and
- a plurality of bit line local positive select switches each configured to supply a positive voltage level to the corresponding bit line of the selected memory cell;
- and
- a bipolar word line decoder configured to connect to the array to selectively bias a corresponding word line of the selected memory cell to one of a positive voltage level or a negative voltage level, the bipolar word line decoder comprising:
- a plurality of word line local negative select switches each configured to supply the negative voltage level to the corresponding word line of the selected memory cell;
- and
- a plurality of word line local positive select switches each configured to supply the positive voltage level to the corresponding word line of the selected memory cell,
- the control circuit configured to:
- bias the selected memory cell either though the corresponding bit line local negative select switch and the corresponding word line local positive select switch or through the corresponding word line local negative select switch and the corresponding bit line local positive select switch to turn on the selected memory cell's threshold switching selector;
- and
- bias a control gate on the local negative select switch of either the corresponding bit line or word line that is biasing the selected memory cell to turn on so that a current though the local negative select switch of either the corresponding bit line or word line that is biasing the selected memory cell to turn on to restrict a current level therethrough subsequent to the selected memory cell's threshold switching selector turning on.
11 more elements
A method, comprising:
- selecting for a read operation a memory cell of a cross-point array in which a plurality of memory cells each comprising a threshold switching selector are each connected between a corresponding one of a plurality of first control lines and a corresponding one of a plurality of second control lines;
- biasing the selected memory cell with a positive voltage level through a first local select switch connected to the corresponding first control line;
- and
- concurrently with biasing the selected memory cell with the positive voltage level through the first local select, biasing the selected memory cell with a negative voltage level through a second local select switch connected to the corresponding second control line, where a voltage differential between the positive voltage level and the negative voltage level is greater than an on voltage of the threshold switching selector of the selected memory cell, including:
- prior to the threshold switching selector of the selected memory cell turning on, biasing the second local select switch to be in a saturation state;
- and
- subsequent to the threshold switching selector of the selected memory cell turning on, biasing the second local select switch to act as a source-follower voltage clamp.
4 more elements
A memory device, comprising:
- a nonvolatile memory cell structure that includes a plurality of nonvolatile memory cells in a cross-point arrangement, each memory cell having a programmable resistive element in series with a threshold switching selector and connected between a corresponding one of a plurality of first control lines and a corresponding one of a plurality of second control lines;
- and
- one or more control circuits connected to the memory cell structure and configured to:
- select for a read operation a memory cell of a cross-point array;
- bias the selected memory cell with a positive voltage level through a first local select switch connected to the corresponding first control line;
- and
- concurrently with biasing the selected memory cell with the positive voltage level through the first local select, bias the selected memory cell with a negative voltage level through a second local select switch connected to the corresponding second control line, where a voltage differential between the positive voltage level and the negative voltage level is greater than an on voltage of the threshold switching selector of the selected memory cell, including:
- prior to the threshold switching selector of the selected memory cell turning on, bias the second local select switch to be in a saturation state;
- and
- subsequent to the threshold switching selector of the selected memory cell turning on, bias the second local select switch to act as a source-follower voltage clamp.
7 more elements
Dependencies are inferred from the claim text.