G11C 11/14
Using thin-film elements
Official title: using thin-film elements
G11C11/14 (Using thin-film elements) appears on 1,587 US grants and 1,427 published applications in this corpus.
Search patents in G11C- Granted patents
- 1,587
- Published applications
- 1,427
- Assignees
- 337
- Inventors
- 1,788
- Latest grant
- 28 Jul 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 5 | 0 |
| 1977 | 12 | 0 |
| 1978 | 2 | 0 |
| 1979 | 2 | 0 |
| 1980 | 3 | 0 |
| 1981 | 3 | 0 |
| 1982 | 2 | 0 |
| 1983 | 1 | 0 |
| 1984 | 2 | 0 |
| 1985 | 3 | 0 |
| 1986 | 3 | 0 |
| 1987 | 2 | 0 |
| 1988 | 5 | 0 |
| 1989 | 6 | 0 |
| 1990 | 3 | 0 |
| 1991 | 6 | 0 |
| 1992 | 5 | 0 |
| 1993 | 5 | 0 |
| 1994 | 10 | 0 |
| 1995 | 6 | 0 |
| 1996 | 7 | 0 |
| 1997 | 10 | 0 |
| 1998 | 13 | 0 |
| 1999 | 15 | 0 |
| 2000 | 22 | 0 |
| 2001 | 44 | 11 |
| 2002 | 67 | 86 |
| 2003 | 83 | 103 |
| 2004 | 107 | 187 |
| 2005 | 155 | 165 |
| 2006 | 135 | 110 |
| 2007 | 103 | 92 |
| 2008 | 74 | 84 |
| 2009 | 46 | 64 |
| 2010 | 68 | 53 |
| 2011 | 55 | 30 |
| 2012 | 50 | 23 |
| 2013 | 38 | 48 |
| 2014 | 48 | 52 |
| 2015 | 52 | 46 |
| 2016 | 52 | 39 |
| 2017 | 42 | 29 |
| 2018 | 27 | 43 |
| 2019 | 46 | 43 |
| 2020 | 40 | 43 |
| 2021 | 31 | 20 |
| 2022 | 16 | 21 |
| 2023 | 21 | 16 |
| 2024 | 19 | 10 |
| 2025 | 11 | 8 |
| 2026 | 4 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Magnetic memory and manufacturing method using field line and bit line construction28 Jul 2026US 12,694,917 B2Kioxia Corporation
- Storage device, memory cell array, method for manufacturing memory cell array, magnetic head, and electronic device16 Jun 2026US 12,658,232 B2Sony Semiconductor Solutions Corporation
- Circuit and method to enhance efficiency of memory16 Jun 2026US 12,660,202 B2Taiwan Semiconductor Manufacturing Company.Ltd
- MRAM circuit and layout3 Mar 2026US 12,567,450 B2United Microelectronics Corp.
- Asynchronous read circuit using delay sensing in magnetoresistive random access memory (MRAM)23 Dec 2025US 12,505,870 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Asynchronous read circuit using delay sensing in magnetoresistive random access memory (mram)19 Mar 2026US 2026/0080923 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Mram circuit and layout20 Nov 2025US 2025/0356895 A1United Microelectronics Corp.
- Topological Racetrack Memory having Multi-bits Storage Capability Each Unit Cell for In-memory Computing in Artificial Intelligent Inference Device30 Oct 2025US 2025/0338504 A1Aurora Micro Devices LLC
- Magnetic memory device25 Sep 2025US 2025/0301660 A1Kioxia Corporation
- Layout pattern of magnetoresistive random access memory6 Mar 2025US 2025/0078891 A1United Microelectronics Corp.
Most cited
By later US patents
- Molecular wire crossbar memory590US 6,128,214 AHewlett-Packard Company · 2000
- Heterogeneous display elements and methods for their fabrication562US 6,241,921 B1Massachusetts Institute of Technology · 2001
- MTJ MRAM series-parallel architecture242US 6,331,943 B1Motorola, Inc. · 2001
- Magnetic thin film memory, method of writing information in it, and me231US 6,226,197 B1Canon Kabushiki Kaisha · 2001
- Off-axis pinned layer magnetic element utilizing spin transfer and an MRAM device using the magnetic element219US 6,888,742 B1Grandis, Inc. · 2005