Storage device, memory cell array, method for manufacturing memory cell array, magnetic head, and electronic device

A memory cell array, comprising:

• a first magnetic memory device having a first characteristic that changes based on an environmental value;
• a second magnetic memory device having a second characteristic different from the first characteristic of the first magnetic memory device;
• and
• a wiring configured to exclusively select:
• the first magnetic memory device based on the environmental value is one of equal to or less than a specific value;
• and
• the second magnetic memory device based on the environmental value is larger than the specific value.

A method for manufacturing a memory cell array, the method comprising:

• forming a first magnetic memory device having a first characteristic that changes based on an environmental value;
• forming a second magnetic memory device having a second characteristic different from the first characteristic of the first magnetic memory device;
• and
• forming a wiring for exclusively selecting:
• the first magnetic memory device based on the environmental value is one of equal to or less than a specific value;
• and
• the second magnetic memory device based on the environmental value is larger than the specific value.

A magnetic head, comprising:

• a first magnetic memory device having a first characteristic that changes based on an environmental value;
• and
• a second magnetic memory device having a second characteristic different from the first characteristic of the first magnetic memory device,
• wherein the magnetic head is configured to exclusively select:
• the first magnetic memory device based on the environmental value is one of equal to or less than a specific value;
• and
• the second magnetic memory device based on the environmental value is larger than the specific value.

An electronic device, comprising:

• a storage device mounted on the electronic device, wherein the storage device includes:
• a plurality of magnetic memory devices;
• and
• a selection circuit configured to select a desired magnetic memory device from the plurality of magnetic memory devices, wherein
• the plurality of magnetic memory devices includes:
• a first magnetic memory devices having a first characteristic that changes based on an environmental value;
• and
• a second magnetic memory devices having a second characteristic different from the first characteristic of the first magnetic memory devices, and
• the selection circuit is further configured to exclusively select:
• the first magnetic memory devices based on the environmental value is one of equal to or less than a specific value;
• and
• the second magnetic memory devices based on the environmental value is larger than the specific value.