US 2025/0301660 A1 · MAGNETIC MEMORY DEVICE

Abstract

A first interconnect and the first insulator extend in a first direction. A second insulator extends in the second direction and penetrates the first interconnect and the first insulator. A second interconnect is provided around the second insulator, extends in the second direction, and penetrates the first interconnect and the first insulator. A first magneto-resistive effect element is provided in a ring-shape around the second interconnect between the first interconnect and the second interconnect, and includes a first ferromagnetic material between the second interconnect and the first interconnect, a first nonmagnetic material between the first ferromagnetic material and the first interconnect, and a second ferromagnetic material between the first nonmagnetic material and the first interconnect.

Claims20

Dependent claims

A magnetic memory device comprising:

a substrate;
a first interconnect and a first insulator extending in a first direction along the substrate;
a second insulator extending in the second direction and penetrating the first interconnect and the first insulator;
a second interconnect provided around the second insulator, extending in the second direction, and penetrating the first interconnect and the first insulator;
and
a first magneto-resistive effect element provided in a ring-shape around the second interconnect between the first interconnect and the second interconnect,
wherein the first magneto-resistive effect element includes:
a first ferromagnetic material between the second interconnect and the first interconnect;
a first nonmagnetic material between the first ferromagnetic material and the first interconnect;
and
a second ferromagnetic material between the first nonmagnetic material and the first interconnect.

8 more elements

A magnetic memory device comprising:

a substrate;
a first interconnect and a first insulator extending in a first direction along the substrate;
a second insulator extending in the second direction and penetrating the first interconnect and the first insulator;
a second interconnect extending in the second direction and penetrating the first interconnect and the first insulator;
and
a first magneto-resistive effect element provided in a ring-shape around the second interconnect between the first interconnect and the second interconnect;
and
a first switching element provided between the first interconnect and the first magneto-resistive effect element and coupled in series to the first magneto-resistive effect element,
wherein the first magneto-resistive effect element includes:
a first ferromagnetic material between the second interconnect and the first interconnect;
a first nonmagnetic material between the first ferromagnetic material and the first interconnect;
and
a second ferromagnetic material between the first nonmagnetic material and the first interconnect.

10 more elements

Dependencies are inferred from the claim text.

Magnetic memory device

Life of this patent

Magnetic memory device

Life of this patent

Abstract

Claims20