Off-axis pinned layer magnetic element utilizing spin transfer and an MRAM device using the magnetic element

A magnetic memory device comprising:

• a plurality of magnetic cells including a plurality of magnetic elements, each of the plurality of magnetic elements including a first pinned layer, a nonmagnetic intermediate layer, and a free layer, the first pinned layer being ferromagnetic and having a first magnetization, the first magnetization being pinned in a first direction, the nomnagnetic intermediate layer residing between the first pinned layer and the free layer, the free layer being ferromagnetic and having a second magnetization with an easy axis in a second direction, the first direction being in the same plane as the second direction and oriented at an angle with respect to the second direction, the angle being different from zero and π radians, wherein the magnetic element is configured to allow the second magnetization of the free layer to change direction due to spin transfer when a write current is passed through the magnetic element, each of the plurality of magnetic elements being configured such that the second magnetization of the free layer can change direction due to spin transfer when a write current is passed through the magnetic element;
• a plurality of row lines coupled to the plurality of magnetic cells;
• and
• a plurality of column lines coupled with the plurality of cells, the plurality of row lines and the plurality of column lines for selecting a portion of the plurality of magnetic cells for reading and writing.

A method for utilizing a magnetic memory comprising the steps of:

• (a) in a write mode, writing to a first portion of a plurality of magnetic cells by driving a write current in a CPP configuration through the a first portion of a plurality of magnetic elements, each of the plurality of magnetic elements including a first pinned layer, a nonmagnetic intermediate layer, and a free layer, the first pinned layer being ferromagnetic and having a first magnetization, the first magnetization being pinned in a first direction, the nonmagnetic intermediate layer residing between the first pinned layer and the free layer, the free layer being ferromagnetic and having a second magnetization with an easy axis in a second direction, the first direction being in the same plane as the second direction and oriented at an angle with respect to the second direction, the angle being different from zero and π radians, wherein the magnetic element is configured to allow the second magnetization of the free layer to change direction due to spin transfer when a write current is passed through the magnetic element, each of the plurality of magnetic elements being configured such that the second magnetization of the free layer can change direction due to spin transfer when a write current is passed through the magnetic element;
• (b) in a read mode, reading a signal from a second portion of the plurality of cells.

A method for providing magnetic element comprising the steps of:

• (a) providing a first pinned layer, the pinned layer being ferromagnetic and having a first magnetization, the first magnetization being pinned in a first direction;
• (b) providing a nonmagnetic intermediate layer;
• (c) providing a free layer, the nonmagnetic intermediate layer residing between the first pinned layer amd the free layer, the free layer being ferromagnetic and having a second magnetization with an easy axis in a second direction, the first direction being in the same plane as the second direction and oriented at an angle with respect to the second direction, the angle being different from zero and π radians;
• wherein the magnetic element is configured to allow the second magnetization of the free layer to change direction due to spin transfer when a write current is passed through the magnetic element.