G11C 11/15
Using multiple magnetic layers
Official title: using multiple magnetic layers (G11C11/155 takes precedence)
G11C11/15 (Using multiple magnetic layers) appears on 1,129 US grants and 1,041 published applications in this corpus.
Search patents in G11C- Granted patents
- 1,129
- Published applications
- 1,041
- Assignees
- 214
- Inventors
- 1,158
- Latest grant
- 16 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 2 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 4 | 0 |
| 1989 | 2 | 0 |
| 1990 | 3 | 0 |
| 1991 | 2 | 0 |
| 1992 | 1 | 0 |
| 1993 | 1 | 0 |
| 1994 | 3 | 0 |
| 1995 | 3 | 0 |
| 1996 | 3 | 0 |
| 1997 | 7 | 0 |
| 1998 | 10 | 0 |
| 1999 | 10 | 0 |
| 2000 | 17 | 0 |
| 2001 | 38 | 11 |
| 2002 | 59 | 80 |
| 2003 | 72 | 91 |
| 2004 | 97 | 161 |
| 2005 | 133 | 143 |
| 2006 | 113 | 95 |
| 2007 | 91 | 65 |
| 2008 | 60 | 46 |
| 2009 | 31 | 31 |
| 2010 | 40 | 24 |
| 2011 | 24 | 10 |
| 2012 | 20 | 11 |
| 2013 | 14 | 28 |
| 2014 | 28 | 29 |
| 2015 | 28 | 33 |
| 2016 | 37 | 29 |
| 2017 | 28 | 20 |
| 2018 | 21 | 32 |
| 2019 | 34 | 24 |
| 2020 | 26 | 28 |
| 2021 | 20 | 12 |
| 2022 | 11 | 14 |
| 2023 | 13 | 11 |
| 2024 | 13 | 7 |
| 2025 | 6 | 5 |
| 2026 | 3 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Storage device, memory cell array, method for manufacturing memory cell array, magnetic head, and electronic device16 Jun 2026US 12,658,232 B2Sony Semiconductor Solutions Corporation
- Circuit and method to enhance efficiency of memory16 Jun 2026US 12,660,202 B2Taiwan Semiconductor Manufacturing Company.Ltd
- MRAM circuit and layout3 Mar 2026US 12,567,450 B2United Microelectronics Corp.
- Asynchronous read circuit using delay sensing in magnetoresistive random access memory (MRAM)23 Dec 2025US 12,505,870 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Circuit and method to enhance efficiency of memory29 Jul 2025US 12,376,313 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Asynchronous read circuit using delay sensing in magnetoresistive random access memory (mram)19 Mar 2026US 2026/0080923 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Mram circuit and layout20 Nov 2025US 2025/0356895 A1United Microelectronics Corp.
- Topological Racetrack Memory having Multi-bits Storage Capability Each Unit Cell for In-memory Computing in Artificial Intelligent Inference Device30 Oct 2025US 2025/0338504 A1Aurora Micro Devices LLC
- Layout pattern of magnetoresistive random access memory6 Mar 2025US 2025/0078891 A1United Microelectronics Corp.
- Magnetic random access memory and manufacturing method thereof6 Mar 2025US 2025/0081470 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- MTJ MRAM series-parallel architecture242US 6,331,943 B1Motorola, Inc. · 2001
- Magnetic thin film memory, method of writing information in it, and me231US 6,226,197 B1Canon Kabushiki Kaisha · 2001
- Off-axis pinned layer magnetic element utilizing spin transfer and an MRAM device using the magnetic element219US 6,888,742 B1Grandis, Inc. · 2005
- Low resistance magnetic tunnel junction device with bilayer or multilayer tunnel barrier216US 6,347,049 B1International Business Machines Corporation · 2002
- Spin valve magnetoresistive sensor with self-pinned laminated layer and magnetic recording system using the sensor215US 5,583,725 AInternational Business Machines Corporation · 1996