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US 12,376,313 B2Granted
Circuit and method to enhance efficiency of memory
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorHung-Chang Yu
Life of this patent
Estimating the term…
Abstract
A method includes: providing a modulation circuit and a driving circuit, the modulation circuit configured to generate a temperature-dependent voltage and provide the same to the driving circuit; determined an operation mode of a memory array; providing a first current corresponding to a positive temperature coefficient by the driving circuit in response to the operation mode being a read operation on the memory array; and providing a second current corresponding to a negative temperature coefficient by the driving circuit in response to the operation mode being a write operation on the memory array.
Claims20
A method, comprising:
- providing a modulation circuit and a driving circuit, the modulation circuit configured to generate a temperature-dependent voltage and provide the same to the driving circuit;
- determining an operation mode of a memory array;
- providing a first current corresponding to a positive temperature coefficient by the driving circuit in response to the operation mode being a read operation on the memory array;
- and
- providing a second current corresponding to a negative temperature coefficient by the driving circuit in response to the operation mode being a write operation on the memory array.
2 more elements
A method, comprising:
- providing a modulation circuit and a driving circuit, the modulation circuit configured to generate a temperature-dependent voltage and provide the same to the driving circuit;
- determining an operation mode of a memory array;
- providing a first voltage, corresponding to a positive temperature coefficient in response to a read operation, to the driving circuit;
- providing a second voltage, corresponding to a negative temperature coefficient in response to a write operation, to the driving circuit;
- providing a first driving current in response to the first voltage from the driving circuit to the memory array during the read operation;
- and
- providing a second driving current in response to the second voltage from the driving circuit to the memory array during the write operation.
4 more elements
A method, comprising:
- determining an operation mode of a memory array;
- providing a modulation circuit configured to generate a temperature-dependent voltage, the providing comprising:
- providing a first portion of the modulation circuit, the first portion configured for generating a first current, the first current comprising a first branch current and a second branch current, the first branch current having a first magnitude, the second branch current having a second magnitude, a first resistive element receiving the first branch current, a second resistive element receiving the second branch current;
- providing a second portion of the modulation circuit, the second portion connected to the first portion, and configured for generating a second current, the second current having a same magnitude as the first current, the second current comprising a first branch current and a second branch current, the first branch current having the first magnitude, the second branch current having the second magnitude, a third resistive element receiving the second branch current of the second current;
- providing an output stage of the modulation circuit, the output stage connected to the second portion and the first portion, and configured for generating a third current and the temperature-dependent voltage, the temperature-dependent voltage having a first voltage and a second voltage, the first voltage corresponding to a positive temperature coefficient in response to the operation mode being a read mode, the second voltage corresponding to a negative temperature coefficient in response to the operation mode being a write mode;
- providing the temperature-dependent voltage to a driving circuit;
- and
- providing an access current by the driving circuit to the memory array in response to the temperature-dependent voltage.
5 more elements
Dependencies are inferred from the claim text.