Layout pattern of magnetoresistive random access memory

A layout pattern of a magnetoresistive random access memory (MRAM), comprising:

• a substrate comprising a first cell region, a second cell region, a third cell region, and a fourth cell region;
• a first gate pattern extending from the first cell region to the third cell region along a first direction;
• a second gate pattern extending from the first cell region to the third cell region along the first direction, wherein the second gate pattern is immediately adjacent to the second cell region;
• a first diffusion region extending from the first cell region to the second cell region along a second direction;
• a first metal pattern adjacent to one side of the first gate pattern and overlapping the first diffusion region;
• a source line pattern extending from the first cell region to the second cell region along the second direction;
• and
• a first spin orbit torque (SOT) pattern extending along the first direction and overlapping the first metal pattern and the source line pattern.