G11C 11/165
Auxiliary circuits
Official title: {Auxiliary circuits}
G11C11/165 (Auxiliary circuits) appears on 5,932 US grants and 6,180 published applications in this corpus.
Search patents in G11C- Granted patents
- 5,932
- Published applications
- 6,180
- Assignees
- 623
- Inventors
- 5,020
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 4 | 0 |
| 1995 | 2 | 0 |
| 1996 | 1 | 0 |
| 1997 | 8 | 0 |
| 1998 | 18 | 0 |
| 1999 | 21 | 0 |
| 2000 | 27 | 0 |
| 2001 | 26 | 13 |
| 2002 | 58 | 62 |
| 2003 | 94 | 129 |
| 2004 | 106 | 89 |
| 2005 | 100 | 116 |
| 2006 | 75 | 88 |
| 2007 | 61 | 63 |
| 2008 | 66 | 97 |
| 2009 | 86 | 219 |
| 2010 | 149 | 288 |
| 2011 | 209 | 231 |
| 2012 | 236 | 275 |
| 2013 | 260 | 276 |
| 2014 | 316 | 337 |
| 2015 | 343 | 360 |
| 2016 | 426 | 384 |
| 2017 | 437 | 335 |
| 2018 | 303 | 324 |
| 2019 | 426 | 419 |
| 2020 | 429 | 452 |
| 2021 | 375 | 347 |
| 2022 | 319 | 345 |
| 2023 | 270 | 311 |
| 2024 | 287 | 215 |
| 2025 | 255 | 229 |
| 2026 | 138 | 176 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- G11C 11/1675Writing or programming circuits or methods4,098
- G11C 11/1673Reading or sensing circuits or methods3,214
- G11C 11/1659Cell access2,394
- G11C 11/1653Address circuits or decoders1,695
- G11C 11/1693Timing circuits or methods701
- G11C 11/1697Power supply circuits465
- G11C 11/1677Verifying circuits or methods242
- G11C 11/1695Protection circuits or methods179
Recent patents
- Multilevel antiferromagnetic memory device29 Sep 2026US 12,749,519 B2Kioxia Corporation
- Bipolar decoders for nonvolatile memory with spike attenuation for threshold selector switches29 Sep 2026US 12,749,520 B2SanDisk Technologies LLC
- Magnetic memory device having magnetic tunnel junction patterns and spin-orbit torque lines22 Sep 2026US 12,744,068 B2Samsung Electronics Co., Ltd.
- Electronic device with memory to write with and without verification22 Sep 2026US 12,744,069 B2Sony Semiconductor Solutions Corporation
- Magnetic tunnel junction with dual reference layers having parallel magnetization directions and methods for operating the same15 Sep 2026US 12,738,306 B2SanDisk Technologies LLC
- Voltage regulators with shared decoupling capacitor for memory devices8 Oct 2026US 2026/0310251 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Controlling the output of a probabilistic-bit spintronic device8 Oct 2026US 2026/0311735 A1Centre National De La Recherche Scientifique
- Multi-level memristor elements8 Oct 2026US 2026/0313913 A1Cirrus Logic International Semiconductor Ltd.
- Midpoint sensing reference generation for stt-mram1 Oct 2026US 2026/0301788 A1Everspin Technologies, Inc.
- Memory system1 Oct 2026US 2026/0301789 A1Aisin Corporation
Most cited
By later US patents
- Magnetic device with optimized heat confinement1,021US 8,411,500 B2Crocus Technology SA · 2013
- Magnetic memory array using magnetic tunnel junction devices in the memory cells768US 5,640,343 AInternational Business Machines Corporation · 1997
- Semiconductor signal processing device422US 8,274,841 B2Renesas Electronics Corporation · 2012
- Electronic device using magnetic components385US 5,695,864 AInternational Business Machines Corporation · 1997
- Magnetic tunnel junctions with controlled magnetic response321US 5,650,958 AInternational Business Machines Corporation · 1997