G11C 11/1693
Timing circuits or methods
Official title: {Timing circuits or methods}
G11C11/1693 (Timing circuits or methods) appears on 701 US grants and 744 published applications in this corpus.
Search patents in G11C- Granted patents
- 701
- Published applications
- 744
- Assignees
- 141
- Inventors
- 903
- Latest grant
- 4 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1997 | 1 | 0 |
| 1998 | 1 | 0 |
| 1999 | 0 | 0 |
| 2000 | 1 | 0 |
| 2001 | 1 | 0 |
| 2002 | 2 | 5 |
| 2003 | 6 | 6 |
| 2004 | 12 | 11 |
| 2005 | 8 | 7 |
| 2006 | 6 | 8 |
| 2007 | 2 | 7 |
| 2008 | 7 | 9 |
| 2009 | 13 | 26 |
| 2010 | 16 | 28 |
| 2011 | 18 | 20 |
| 2012 | 21 | 23 |
| 2013 | 26 | 26 |
| 2014 | 20 | 50 |
| 2015 | 58 | 77 |
| 2016 | 77 | 53 |
| 2017 | 64 | 49 |
| 2018 | 46 | 52 |
| 2019 | 55 | 45 |
| 2020 | 54 | 56 |
| 2021 | 50 | 40 |
| 2022 | 40 | 35 |
| 2023 | 23 | 36 |
| 2024 | 28 | 18 |
| 2025 | 24 | 33 |
| 2026 | 21 | 24 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Circuit snapback and charge diversion for cross-point arrays4 Aug 2026US 12,700,443 B2SanDisk Technologies LLC
- Magnetic memory4 Aug 2026US 12,700,468 B2Kioxia Corporation
- Magnetic memory devices having a low switching voltage4 Aug 2026US 12,701,925 B2Northwestern University
- Memory device and operating method thereof23 Jun 2026US 12,665,009 B2SK hynix Inc.
- Memory device2 Jun 2026US 12,646,545 B2Kioxia Corporation
- Memory system1 Oct 2026US 2026/0301789 A1Aisin Corporation
- Magnetic array, methods of controlling magnetic array, and recording media17 Sep 2026US 2026/0279422 A1TDK Corporation
- Adaptive memory management and control circuitry13 Aug 2026US 2026/0237432 A1Numem Inc.
- Semiconductor storage device13 Aug 2026US 2026/0237433 A1Kioxia Corporation
- Cross-point array leakage compensation6 Aug 2026US 2026/0229265 A1SanDisk Technologies LLC
Most cited
By later US patents
- Magnetic memory array using magnetic tunnel junction devices in the memory cells768US 5,640,343 AInternational Business Machines Corporation · 1997
- Method and system for using a pulsed field to assist spin transfer induced switching of magnetic memory elements224US 7,502,249 B1Grandis, Inc. · 2009
- Read circuit for magnetic memory array using magnetic tunnel junction devices214US 5,793,697 AInternational Business Machines Corporation · 1998
- Current-switched spin-transfer magnetic devices with reduced spin-transfer switching current density160US 7,430,135 B2Grandis, Inc. · 2008
- MRAM device including digital sense amplifiers123US 6,188,615 B1Hewlett-Packard Company · 2001