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AssigneesGrandis, Inc., Renesas Technology Corp.
InventorYunfei Ding
Estimating the term…
A method and system for providing and utilizing a magnetic memory are described. The magnetic memory includes a plurality of magnetic storage cells. Each magnetic storage cell includes magnetic element(s) programmable due to spin transfer when a write current is passed through the magnetic element(s) and selection device(s). The method and system include driving a first current in proximity to but not through the magnetic element(s) of a portion of the magnetic storage cells. The first current generates a magnetic field. The method and system also include driving a second current through the magnetic element(s) of the portion of the magnetic storage cells. The first and second currents are preferably both driven through bit line(s) coupled with the magnetic element(s). The first and second currents are turned on at a start time. The second current and the magnetic field are sufficient to program the magnetic element(s).
A method for programming a magnetic memory, the magnetic memory including a plurality of magnetic storage cells and a plurality of bit lines, each of the plurality of magnetic storage cells including at least one magnetic element programmable due to spin transfer when a write current is passed through the magnetic element and at least one selection device, at least one bit line of the plurality of bit lines coupled to the at least one magnetic element of the plurality of magnetic elements, wherein at least one magnetic layer of the at least one magnetic element has in-plane anisotropy, the method comprising:
A magnetic memory comprising:
Dependencies are inferred from the claim text.