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US 7,430,135 B2Granted
Current-switched spin-transfer magnetic devices with reduced spin-transfer switching current density
AssigneeGrandis, Inc.
InventorsYiming Huai, Zhitao Diao, Alex Panchula, Eugene Youjun Chen, Lien-Chang Wang
Life of this patent
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Abstract
Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having one or more spin diffusion layers to diffuse the electron spins outside the MTJ or spin valve structure to reduce the spin transfer switching current for switching the free layer.
Claims35
A device, comprising:
- a free ferromagnetic layer having a magnetization direction that is changeable;
- a pinned ferromagnetic layer having a magnetization direction fixed along a predetermined direction;
- a middle layer formed between the free and pinned ferromagnetic layers;
- a spin diffusion layer located next to the free ferromagnetic layer and outside a structure formed by the free and pinned ferromagnetic layers and the middle layer, wherein the spin diffusion layer interacts with electrons to diffuse electron spins;
- and
- a diffusion barrier layer formed between the spin diffusion layer and the free ferromagnetic layer to separate the spin diffusion layer and the free ferromagnetic layer.
3 more elements
A device, comprising:
- a free ferromagnetic layer having a magnetization direction that is changeable;
- a pinned ferromagnetic layer having a magnetization direction fixed along a predetermined direction;
- a middle layer formed between the free and pinned ferromagnetic layers;
- a spin diffusion layer located next to the free ferromagnetic layer and outside a structure formed by the free and pinned ferromagnetic layers and the middle layer, wherein the spin diffusion layer interacts with electrons to diffuse electron spins;
- and
- a second spin diffusion layer which interacts with electrons to diffuse electron spins, wherein the free and pinned ferromagnetic layers and the middle layer are between the spin diffusion layer and the second spin diffusion layer.
3 more elements
A device, comprising:
- a free ferromagnetic layer having a magnetization direction that is changeable;
- a pinned ferromagnetic layer having a magnetization direction fixed along a predetermined direction;
- a middle layer formed between the free and pinned ferromagnetic layers;
- a spin diffusion layer located next to the free ferromagnetic layer and outside a structure formed by the free and pinned ferromagnetic layers and the middle layer, wherein the spin diffusion layer interacts with electrons to diffuse electron spins;
- an antiferromagnetic layer deposited adjacent to and magnetically coupled to pin the magnetization direction of the pinned ferromagnetic layer;
- and
- a second spin diffusion layer which interacts with electrons to diffuse electron spins, wherein the antiferromagnetic layer is between the pinned ferromagnetic layer and the second spin diffusion layer.
4 more elements
Dependencies are inferred from the claim text.