Memory device

A memory device comprising:

• a memory cell including a first end and a second end;
• a first interconnect coupled to the first end;
• a first switch coupled between the first interconnect and a first node, the first node receiving a first voltage;
• a second interconnect coupled to the second end;
• a second switch including a third end coupled to the second interconnect and a fourth end;
• a third interconnect coupled to the fourth end;
• a third switch coupled between the third interconnect and a second node, the second node receiving a second voltage different from the first voltage;
• and
• a controller configured to:
• apply a third voltage between the second voltage and the first voltage to the first interconnect and the second interconnect,
• turn on the third switch,
• turn off the third switch and turn on the second switch after the third switch is turned on and after the application of the third voltage, and
• turn off the first switch after the application of the third voltage.