Magnetic array, methods of controlling magnetic array, and recording media

A method of controlling a magnetic array, comprising:

• a writing step of applying, as a write pulse, at least one of a magnetic domain wall driving pulse and a mode change pulse to a memristor including a magnetic domain wall motion layer, a ferromagnetic layer, and a nonmagnetic layer sandwiched between the magnetic domain wall motion layer and the ferromagnetic layer,
• wherein the writing step includes a determination step and an application step,
• in the determination step, it is determined, in a process of updating a conductance, whether or not application of the mode change pulse is necessary based on the conductance of the memristor before updating and the conductance of the memristor after updating,
• in the application step, at least one of the magnetic domain wall driving pulse and the mode change pulse is applied to the memristor a predetermined number of times,
• the mode change pulse has a longer pulse length than the magnetic domain wall driving pulse, and
• in one process of updating the conductance, the number of times of application of the mode change pulse is equal to or smaller than the number of times of application of the magnetic domain wall driving pulse.

A computer-readable recording medium including a program,

• wherein the program includes a write program for applying, as a write pulse, at least one of a magnetic domain wall driving pulse and a mode change pulse to a memristor including a magnetic domain wall motion layer, a ferromagnetic layer, and a nonmagnetic layer sandwiched between the magnetic domain wall motion layer and the ferromagnetic layer,
• the write program includes a determination program and an application program,
• the determination program determines, in a process of updating a conductance, whether or not application of the mode change pulse is necessary based on the conductance of the memristor before updating and the conductance of the memristor after updating,
• the application program issues an instruction to apply at least one of the magnetic domain wall driving pulse and the mode change pulse to the memristor a predetermined number of times,
• the mode change pulse has a longer pulse length than the magnetic domain wall driving pulse, and
• in one process of updating the conductance, the number of times of application of the mode change pulse is equal to or smaller than the number of times of application of the magnetic domain wall driving pulse.