G11C 11/1675
Writing or programming circuits or methods
Official title: {Writing or programming circuits or methods}
G11C11/1675 (Writing or programming circuits or methods) appears on 4,098 US grants and 4,313 published applications in this corpus.
Search patents in G11C- Granted patents
- 4,098
- Published applications
- 4,313
- Assignees
- 504
- Inventors
- 3,681
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 2 | 0 |
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
| 1997 | 7 | 0 |
| 1998 | 16 | 0 |
| 1999 | 17 | 0 |
| 2000 | 23 | 0 |
| 2001 | 15 | 7 |
| 2002 | 30 | 29 |
| 2003 | 47 | 64 |
| 2004 | 51 | 46 |
| 2005 | 53 | 65 |
| 2006 | 42 | 55 |
| 2007 | 35 | 43 |
| 2008 | 41 | 68 |
| 2009 | 65 | 173 |
| 2010 | 111 | 217 |
| 2011 | 160 | 177 |
| 2012 | 183 | 220 |
| 2013 | 203 | 191 |
| 2014 | 234 | 237 |
| 2015 | 235 | 251 |
| 2016 | 300 | 285 |
| 2017 | 305 | 233 |
| 2018 | 223 | 238 |
| 2019 | 304 | 290 |
| 2020 | 300 | 312 |
| 2021 | 252 | 232 |
| 2022 | 215 | 237 |
| 2023 | 169 | 202 |
| 2024 | 189 | 149 |
| 2025 | 179 | 167 |
| 2026 | 89 | 125 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Multilevel antiferromagnetic memory device29 Sep 2026US 12,749,519 B2Kioxia Corporation
- Magnetic memory device having magnetic tunnel junction patterns and spin-orbit torque lines22 Sep 2026US 12,744,068 B2Samsung Electronics Co., Ltd.
- Electronic device with memory to write with and without verification22 Sep 2026US 12,744,069 B2Sony Semiconductor Solutions Corporation
- Magnetic tunnel junction with dual reference layers having parallel magnetization directions and methods for operating the same15 Sep 2026US 12,738,306 B2SanDisk Technologies LLC
- Sensor based on direct spin hall effect15 Sep 2026US 12,740,325 B2Western Digital Technologies, Inc.
- Controlling the output of a probabilistic-bit spintronic device8 Oct 2026US 2026/0311735 A1Centre National De La Recherche Scientifique
- Detection architecture for a probabilistic-bit spintronic device1 Oct 2026US 2026/0305179 A1
- Magnetoresistance effect element and magnetic memory24 Sep 2026US 2026/0293531 A1TDK Corporation
- Magnetic switching of 2d dilute magnetic semiconductor monolayers above room temperature in the absence of an external magnetic field24 Sep 2026US 2026/0293533 A1The Trustees of the Stevens Institute of Technology
- Method for writing to magnetic random access memory17 Sep 2026US 2026/0279421 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Magnetic device with optimized heat confinement1,021US 8,411,500 B2Crocus Technology SA · 2013
- Magnetic memory array using magnetic tunnel junction devices in the memory cells768US 5,640,343 AInternational Business Machines Corporation · 1997
- Semiconductor signal processing device422US 8,274,841 B2Renesas Electronics Corporation · 2012
- Electronic device using magnetic components385US 5,695,864 AInternational Business Machines Corporation · 1997
- Magnetic tunnel junctions with controlled magnetic response321US 5,650,958 AInternational Business Machines Corporation · 1997