Magnetoresistance effect element and magnetic memory
AssigneeTDK Corporation
InventorEiji KOMURA
Life of this patent
Estimating the term…
Abstract
This magnetoresistance effect element has a laminate, a first wiring, a second wiring, a first via wiring, and a second via wiring. The laminate has a spin-orbit torque wiring, a first ferromagnetic layer, a nonmagnetic layer, and a second ferromagnetic layer. The first wiring and the second wiring are connected to the spin-orbit torque wiring. A gap between the first wiring and the second wiring is constant on surfaces where the spin-orbit torque wiring is connected to the first wiring and the second wiring. The first via wiring is connected to the first wiring, and the second via wiring is connected to the second wiring. The gap between the first wiring and the second wiring is shorter than a long axis length of the laminate.
Claims8
A magnetoresistance effect element comprising:
- a laminate;
- a first wiring;
- a second wiring;
- a first via wiring;
- and
- a second via wiring,
- wherein the laminate has a spin-orbit torque wiring, a first ferromagnetic layer, a nonmagnetic layer, and a second ferromagnetic layer,
- the first ferromagnetic layer is located between the spin-orbit torque wiring and the nonmagnetic layer in a lamination direction of the laminate,
- the nonmagnetic layer is located between the first ferromagnetic layer and the second ferromagnetic layer in the lamination direction of the laminate,
- the first wiring is connected to the spin-orbit torque wiring,
- the second wiring is connected to the spin-orbit torque wiring at a position different from a position of the first wiring,
- a gap between the first wiring and the second wiring is constant on surfaces where the spin-orbit torque wiring is connected to the first wiring and the second wiring,
- the first via wiring is connected to the first wiring,
- the second via wiring is connected to the second wiring, and
- the gap between the first wiring and the second wiring is shorter than a long axis length of the laminate.
A magnetic memory comprising:
- a magnetoresistance effect element including
- a laminate;
- a first wiring;
- a second wiring;
- a first via wiring;
- and
- a second via wiring, wherein
- the laminate has a spin-orbit torque wiring, a first ferromagnetic layer, a nonmagnetic layer, and a second ferromagnetic layer,
- the first ferromagnetic layer is located between the spin-orbit torque wiring and the nonmagnetic layer in a lamination direction of the laminate,
- the nonmagnetic layer is located between the first ferromagnetic layer and the second ferromagnetic layer in the lamination direction of the laminate,
- the first wiring is connected to the spin-orbit torque wiring,
- the second wiring is connected to the spin-orbit torque wiring at a position different from a position of the first wiring,
- a gap between the first wiring and the second wiring is constant on surfaces where the spin-orbit torque wiring is connected to the first wiring and the second wiring,
- the first via wiring is connected to the first wiring,
- the second via wiring is connected to the second wiring, and
- the gap between the first wiring and the second wiring is shorter than a long axis length of the laminate.
Dependencies are inferred from the claim text.