Sensor based on direct spin hall effect

A spin orbit torque (SOT) device, comprising:

• a topological material (TM) layer having a first surface and a second surface opposite the first surface;
• a first free layer disposed on the first surface of the TM layer;
• and
• a second free layer disposed on the second surface of the TM layer, wherein the SOT device is a current-in-plane (CIP) device.

A sensor, comprising:

• a Wheatstone bridge, the Wheatstone bridge comprising:
• a first free layer;
• a second free layer disposed adjacent to the first free layer;
• a topological material (TM) layer disposed over the first and second free layers;
• a third free layer disposed over the TM layer;
• a fourth free layer disposed adjacent to the third free layer;
• a first output lead disposed between the first free layer and the third free layer;
• a second output lead disposed between the second free layer and the fourth free layer;
• and
• means for measuring the voltage output between the first and second output leads.