Magnetic tunnel junction with dual reference layers having parallel magnetization directions and methods for operating the same

A method of operating a spin transfer torque (STT) magnetoresistive random memory (MRAM) device, comprising:

• providing a magnetoresistive memory cell which comprises a first electrode, a second electrode, and a layer stack located between the first electrode and the second electrode and comprising, from one end to another, a first reference layer, a first tunnel barrier layer, a free layer, a second tunnel barrier layer, a second reference layer, wherein the first reference layer and the second reference layer have magnetization directions that are parallel to each other, and wherein a first one of the first reference layer and the second reference layer comprises a positive spin polarization material, wherein the positive spin polarization material causes a spin direction of electrons passing through the positive spin polarization material to align along a magnetization direction of the positive spin polarization material, and a second one of the first reference layer and the second reference layer comprises a negative spin polarization material, wherein the negative spin polarization material causes a spin direction of electrons passing through the negative spin polarization material to align along an opposite direction of a magnetization direction of the negative spin polarization material;
• applying a read bias across the first electrode and the second electrode while the magnetization directions of the first reference layer and the second reference layer are parallel to each other;
• and
• determining a magnetization direction of the free layer relative to the magnetization directions of the first reference layer and the second reference layer based on a magnitude of electrical current that flows through the layer stack under the read bias.