Magnetic switching of 2d dilute magnetic semiconductor monolayers above room temperature in the absence of an external magnetic field

Abstract

The disclosed technology includes spin-orbit and orbital torque devices. The device includes a bottom electrode and a free magnetic layer. The bottom electrode is capable of generating spin currents via the spin Hall effect. The free magnetic layer is disposed on the bottom electrode. A magnetization of the free magnetic layer is switchable by the spin currents between, relative to the predetermined state, a parallel state and an antiparallel state in the absence of an external magnetic field. The free magnetic layer includes a van der Waals dilute magnetic semiconductor having a Curie Temperature greater than room temperature.

Dependencies are inferred from the claim text.