G11C 11/1673
Reading or sensing circuits or methods
Official title: {Reading or sensing circuits or methods}
G11C11/1673 (Reading or sensing circuits or methods) appears on 3,214 US grants and 3,321 published applications in this corpus.
Search patents in G11C- Granted patents
- 3,214
- Published applications
- 3,321
- Assignees
- 424
- Inventors
- 3,146
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 4 | 0 |
| 1995 | 2 | 0 |
| 1996 | 1 | 0 |
| 1997 | 6 | 0 |
| 1998 | 10 | 0 |
| 1999 | 11 | 0 |
| 2000 | 12 | 0 |
| 2001 | 15 | 6 |
| 2002 | 36 | 32 |
| 2003 | 39 | 59 |
| 2004 | 56 | 55 |
| 2005 | 59 | 57 |
| 2006 | 42 | 36 |
| 2007 | 29 | 30 |
| 2008 | 27 | 50 |
| 2009 | 44 | 100 |
| 2010 | 70 | 147 |
| 2011 | 98 | 99 |
| 2012 | 110 | 103 |
| 2013 | 105 | 142 |
| 2014 | 151 | 167 |
| 2015 | 180 | 202 |
| 2016 | 252 | 233 |
| 2017 | 271 | 202 |
| 2018 | 182 | 175 |
| 2019 | 244 | 227 |
| 2020 | 237 | 252 |
| 2021 | 205 | 177 |
| 2022 | 168 | 191 |
| 2023 | 140 | 190 |
| 2024 | 164 | 122 |
| 2025 | 152 | 157 |
| 2026 | 91 | 110 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Magnetic tunnel junction with dual reference layers having parallel magnetization directions and methods for operating the same15 Sep 2026US 12,738,306 B2SanDisk Technologies LLC
- Apparatus and methods for managing selector device threshold voltage drift15 Sep 2026US 12,738,307 B2SanDisk Technologies LLC
- Midpoint sensing reference generation for stt-mram1 Oct 2026US 2026/0301788 A1Everspin Technologies, Inc.
- Logic drive using standard commodity programmable logic ic chips comprising non-volatile random access memory cells1 Oct 2026US 2026/0303097 A1iCometrue Company Ltd.
- Detection architecture for a probabilistic-bit spintronic device1 Oct 2026US 2026/0305179 A1
- Apparatus and method for controlling p-bit cell24 Sep 2026US 2026/0290419 A1Electronics and Telecommunications Research Institute
- Memory system and operating method24 Sep 2026US 2026/0290453 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Magnetic memory array using magnetic tunnel junction devices in the memory cells768US 5,640,343 AInternational Business Machines Corporation · 1997
- Magnetic spin injected field effect transistor and method of operation245US 5,654,566 A1997
- Shiftable magnetic shift register and method of using the same217US 6,834,005 B1International Business Machines Corporation · 2004
- Read circuit for magnetic memory array using magnetic tunnel junction devices214US 5,793,697 AInternational Business Machines Corporation · 1998
- Magnetic tunnel junction device with longitudinal biasing177US 5,729,410 AInternational Business Machines Corporation · 1998