Apparatus and methods for managing selector device threshold voltage drift

An apparatus comprising:

• a cross-point memory array comprising a plurality of memory cells, each memory cell comprising a magnetic tunnel junction memory element coupled in series with a selector element;
• a control circuit coupled to the cross-point memory array, the control circuit configured to:
• perform a self-referenced read operation of each of the plurality of memory cells;
• and
• for each memory cell that changed from a first direction of magnetization to a second direction of magnetization as a result of the self-referenced read operation:
• apply a SET pulse to change direction of magnetization from the second direction of magnetization to the first direction of magnetization;
• and
• apply a post-set pulse comprising a polarity opposite the polarity of the SET pulse.

A method comprising:

• determining a bit error rate of a plurality of memory cells, each comprising an ovonic threshold switch coupled in series with a magnetic memory element, by:
• performing a sequence of self-referenced read operations of each of the memory cells, each self-referenced read operation comprising a RESET pulse comprising a first polarity;
• and
• after every other self-referenced read operation, applying to the memory cells a SET pulse comprising a second polarity, and a post-set pulse comprising the first polarity,
• wherein the post-set pulses are configured to reduce the bit error rate of the plurality of memory cells.