G11C 11/1659
Cell access
Official title: {Cell access}
G11C11/1659 (Cell access) appears on 2,394 US grants and 2,554 published applications in this corpus.
Search patents in G11C- Granted patents
- 2,394
- Published applications
- 2,554
- Assignees
- 312
- Inventors
- 2,436
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 1 | 0 |
| 1997 | 4 | 0 |
| 1998 | 5 | 0 |
| 1999 | 10 | 0 |
| 2000 | 11 | 0 |
| 2001 | 3 | 3 |
| 2002 | 16 | 16 |
| 2003 | 19 | 38 |
| 2004 | 25 | 25 |
| 2005 | 30 | 26 |
| 2006 | 17 | 29 |
| 2007 | 14 | 23 |
| 2008 | 27 | 42 |
| 2009 | 33 | 98 |
| 2010 | 64 | 163 |
| 2011 | 119 | 137 |
| 2012 | 126 | 143 |
| 2013 | 136 | 128 |
| 2014 | 160 | 157 |
| 2015 | 145 | 156 |
| 2016 | 194 | 159 |
| 2017 | 169 | 122 |
| 2018 | 101 | 82 |
| 2019 | 134 | 144 |
| 2020 | 156 | 184 |
| 2021 | 168 | 144 |
| 2022 | 122 | 150 |
| 2023 | 105 | 116 |
| 2024 | 118 | 82 |
| 2025 | 102 | 112 |
| 2026 | 58 | 75 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Bipolar decoders for nonvolatile memory with spike attenuation for threshold selector switches29 Sep 2026US 12,749,520 B2SanDisk Technologies LLC
- Apparatus and methods for managing selector device threshold voltage drift15 Sep 2026US 12,738,307 B2SanDisk Technologies LLC
- Scaled one transistor two resistor (1T 2R) memory8 Sep 2026US 12,733,178 B2International Business Machines Corporation
- Magnetic storage device provided with magnetoresistive element1 Sep 2026US 12,725,632 B2National Institute of Advanced Industrial Science and Technology
- Bipolar decoders for nonvolatile memory1 Sep 2026US 12,725,645 B2SanDisk Technologies LLC
- Memory device and operating method of the memory device17 Sep 2026US 2026/0279423 A1Samsung Electronics Co., Ltd.
- Power supply generator assist17 Sep 2026US 2026/0279425 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Storage device3 Sep 2026US 2026/0260680 A1Sony Semiconductor Solutions Corporation
- Magnetic memory cell based on stt-assisted sot writing comprising an n-type transistor and a p-type transistor as select transistors, and mram memory20 Aug 2026US 2026/0247870 A1Centre National De La Recherche Scientifique
- Semiconductor storage device13 Aug 2026US 2026/0237433 A1Kioxia Corporation
Most cited
By later US patents
- Magnetic memory array using magnetic tunnel junction devices in the memory cells768US 5,640,343 AInternational Business Machines Corporation · 1997
- Magnetic spin injected field effect transistor and method of operation245US 5,654,566 A1997
- Magnetic spin polarization and magnetization rotation device with memory and writing process, using such a device243US 6,532,164 B2Commissariat A L' Energie Atomique · 2003
- Method and system for using a pulsed field to assist spin transfer induced switching of magnetic memory elements224US 7,502,249 B1Grandis, Inc. · 2009
- Read circuit for magnetic memory array using magnetic tunnel junction devices214US 5,793,697 AInternational Business Machines Corporation · 1998