Storage device
AssigneeSony Semiconductor Solutions Corporation
InventorsLUI SAKAI, KEIZO HIRAGA, YUTAKA HIGO, MASANORI HOSOMI
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AssigneeSony Semiconductor Solutions Corporation
InventorsLUI SAKAI, KEIZO HIRAGA, YUTAKA HIGO, MASANORI HOSOMI
Estimating the term…
It is enabled to store data held in a volatile storage unit in a nonvolatile storage unit on the basis of voltage drive. A storage device includes: a volatile storage unit that complementarily holds data; and a voltage-controlled magneto-resistive effect element that holds the data complementarily held in the volatile storage unit. There may be further included a variable resistance element connected between the volatile storage unit and the voltage-controlled magneto-resistive effect element, the variable resistance element enabling resistance between the volatile storage unit and the voltage-controlled magneto-resistive effect element to vary. The variable resistance element may vary resistance to cause cell voltages applied to the voltage-controlled magneto-resistive effect element to be substantially equal to each other, the cell voltages being a cell voltage applied when the voltage-controlled magneto-resistive effect element transitions from a high resistance state to a low resistance state and a cell voltage applied when the voltage-controlled magneto-resistive effect element transitions from the low resistance state to the high resistance state.
A storage device comprising:
Dependencies are inferred from the claim text.