G11C 11/1677
Verifying circuits or methods
Official title: {Verifying circuits or methods}
G11C11/1677 (Verifying circuits or methods) appears on 242 US grants and 261 published applications in this corpus.
Search patents in G11C- Granted patents
- 242
- Published applications
- 261
- Assignees
- 67
- Inventors
- 400
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2005 | 0 | 2 |
| 2006 | 1 | 1 |
| 2007 | 2 | 1 |
| 2008 | 0 | 0 |
| 2009 | 0 | 2 |
| 2010 | 2 | 7 |
| 2011 | 5 | 6 |
| 2012 | 5 | 11 |
| 2013 | 7 | 5 |
| 2014 | 10 | 13 |
| 2015 | 14 | 22 |
| 2016 | 27 | 32 |
| 2017 | 30 | 18 |
| 2018 | 16 | 27 |
| 2019 | 30 | 16 |
| 2020 | 24 | 28 |
| 2021 | 18 | 13 |
| 2022 | 13 | 14 |
| 2023 | 9 | 14 |
| 2024 | 13 | 8 |
| 2025 | 10 | 12 |
| 2026 | 6 | 9 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Electronic device with memory to write with and without verification22 Sep 2026US 12,744,069 B2Sony Semiconductor Solutions Corporation
- Apparatus and methods for managing selector device threshold voltage drift15 Sep 2026US 12,738,307 B2SanDisk Technologies LLC
- Magnetoresistive random-access memory (MRAM)23 Jun 2026US 12,665,010 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Memory system and operating method16 Jun 2026US 12,658,254 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Low error rate read operation in multi-module arrays26 May 2026US 12,640,181 B2SanDisk Technologies LLC
- Memory system and operating method24 Sep 2026US 2026/0290453 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Magnetoresistive random-access memory (mram)17 Sep 2026US 2026/0279424 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Memory device and memory system30 Jul 2026US 2026/0221175 A1Sony Semiconductor Solutions Corporation
- Storage device, electronic apparatus, and storage device control method30 Jul 2026US 2026/0221176 A1Sony Semiconductor Solutions Corporation
- Memory built-in self-test with automated write trim tuning30 Jul 2026US 2026/0221209 A1Siemens Industry Software Inc.
Most cited
By later US patents
- Method and apparatus pertaining to a ferroelectric random access memory65US 8,717,800 B2Texas Instruments Incorporated · 2014
- Memory write error correction circuit52US 8,456,926 B2Grandis, Inc. · 2013
- Spin transfer torque MRAM device with error buffer50US 10,115,446 B1Spin Transfer Technologies, Inc. · 2018
- Nonvolatile memory device50US 8,582,353 B2Hynix Semiconductor Inc. · 2013
- Method and apparatus for bipolar memory write-verify48US 10,163,479 B2Spin Transfer Technologies, Inc. · 2018