Nonvolatile memory device
AssigneeHynix Semiconductor Inc.
InventorSung Yeon Lee
Life of this patent
Estimating the term…
Abstract
A nonvolatile memory device comprises a memory cell configured to store or output data in a magneto-resistance device in response to a write current applied to a bit line and a source line. A voltage detector is configured to sense potentials loaded in the bit line and the source line. A write current controller configured to control activation of a write control signal in response to an output of the voltage detector, and a write driver configured to control amounts of write current applied to the memory cell according to the activation of the write control signal.
Claims20
A nonvolatile memory device, comprising:
- a memory cell configured to write data in a magneto-resistance device in response to a write current applied to a bit line and a source line;
- a voltage detector configured to sense potentials loaded in the bit line and the source line when a write enable signal is activated;
- a write current controller configured to control activation of a write control signal in response to an output of the voltage detector;
- and
- a write driver configured to control amounts of write current applied to the memory cell according to the activation of the write control signal.
A nonvolatile memory device, comprising:
- a memory cell configured to perform data read or write operation in response to a write current applied to a bit line and a source line, wherein the memory cell includes,
- a magneto-resistance device coupled to the bit line, and
- a switching device located between the magneto-resistance device and the source line, the switching device controlled by a word line;
- a voltage detector configured to sense potentials loaded in the bit line and the source line when a write enable signal is activated;
- a write current controller configured to control voltage level of a write control signal in response to an output of the voltage detector;
- and
- a write driver configured to control amounts of write current applied to the memory cell,
- wherein amounts of current flowing through the memory cell are adjusted by the write control signal inputted to a gate of the switching device.
Dependencies are inferred from the claim text.