Memory built-in self-test with automated write trim tuning

A method comprising:

• prompting, by a memory built-in self-test system, a memory device to selectively perform memory write operations to store the data using selected test values for the write trim in a write trim range based on whether the selected test values for the write trim fall outside of a searchable section of the write trim range;
• determining, by the memory built-in self-test system, when the memory device fails to correctly store the data with the write voltages corresponding to each of the selected test values for the write trim, wherein the memory built-in self-test system is configured to iteratively select one or more of the test values for the write trim based, at least in part, on the determination of failures of the memory device to correctly store the data, and
• setting, by the memory built-in self-test system, the write trim for the memory device based, at least in part, on the determination of failures of the memory device to correctly store the data.

An apparatus comprising:

• a memory built-in self-test controller configured to prompt the memory device to selectively perform memory write operations to store the data using selected test values for the write trim in a write trim range based on whether the selected test values for the write trim fall outside of a searchable section of the write trim range;
• and
• a write trim tuning circuit configured to determine when the memory device fails to correctly store the data with the write voltages corresponding to each of the selected test values for the write trim, and set the write trim for the memory device based, at least in part, on the determination of failures of the memory device to correctly store the data, wherein the write trim tuning circuit is configured to iteratively select one or more of the test values for the write trim based, at least in part, on the determination of failures of the memory device to correctly store the data.