Storage device, electronic apparatus, and storage device control method
AssigneeSony Semiconductor Solutions Corporation
InventorsLUI SAKAI, YUTAKA HIGO, MASANORI HOSOMI, KEIZO HIRAGA
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Abstract
A storage device according to an aspect of the present disclosure includes: a magnetoresistive element whose magnetization direction is variable between a first state and a second state; a selection element connected to the magnetoresistive element; and a write unit that switches and supplies, to the magnetoresistive element, a first current for bringing the magnetization direction of the magnetoresistive element into the first state and a second current for bringing the magnetization direction of the magnetoresistive element into the second state.
Claims19
A storage device comprising:
- a magnetoresistive element whose magnetization direction is variable between a first state and a second state;
- a selection element connected to the magnetoresistive element;
- and
- a write unit that switches and supplies, to the magnetoresistive element, a first current for bringing the magnetization direction of the magnetoresistive element into the first state and a second current for bringing the magnetization direction of the magnetoresistive element into the second state.
An electronic apparatus comprising
- a storage device that stores data, wherein
- the storage device includes
- a magnetoresistive element whose magnetization direction is variable between a first state and a second state,
- a selection element connected to the magnetoresistive element, and
- a write unit that switches and supplies, to the magnetoresistive element, a first current for bringing the magnetization direction of the magnetoresistive element into the first state and a second current for bringing the magnetization direction of the magnetoresistive element into the second state.
A storage device control method comprising
- switching and supplying, to a magnetoresistive element whose magnetization direction is variable between a first state and a second state, a first current for bringing the magnetization direction of the magnetoresistive element into the first state and a second current for bringing the magnetization direction of the magnetoresistive element into the second state.
Dependencies are inferred from the claim text.