Memory device and memory system
AssigneeSony Semiconductor Solutions Corporation
InventorsLui Sakai, Masanori Hosomi, Yutaka Higo, Keizo Hiraga
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Abstract
Provided is a memory device including: a magnetoresistive element connected between a first control line and a second control line, a write circuit that controls writing to the magnetoresistive element, and a read circuit that controls reading from the magnetoresistive element. The magnetoresistive element is a voltage-controlled magnetic anisotropy (VCMA) effect magnetoresistive element, and the write circuit controls the magnetoresistive element such that a first voltage for writing in a high resistance state and a second voltage for writing in a low resistance state have opposite directions.
Claims19
A memory device comprising:
- a magnetoresistive element connected between a first control line and a second control line;
- a write circuit configured to control writing to the magnetoresistive element;
- and
- a read circuit configured to control reading from the magnetoresistive element, wherein
- the magnetoresistive element is a voltage-controlled magnetic anisotropy (VCMA) effect magnetoresistive element, and
- the write circuit controls the magnetoresistive element such that a first voltage for writing in a high resistance state and a second voltage for writing in a low resistance state have opposite directions.
A memory system comprising:
- a plurality of memory cells including a magnetoresistive element and a selection element that selects the magnetoresistive element;
- a write circuit configured to select the plurality of memory cells and performs writing to the magnetoresistive element via the selection element;
- a read circuit configured to select the plurality of memory cells and performs reading from the magnetoresistive element via the selection element;
- and
- a memory control unit configured to control data writing and reading in the plurality of the memory cells via the write circuit and the read circuit, wherein
- the magnetoresistive element is a voltage-controlled magnetic anisotropy (VCMA) effect magnetoresistive element, and
- the write circuit controls the magnetoresistive element such that a first voltage for writing in a high resistance state and a second voltage for writing in a low resistance state have opposite directions.
Dependencies are inferred from the claim text.