G11C 11/1655
Bit-line or column circuits
Official title: {Bit-line or column circuits}
G11C11/1655 (Bit-line or column circuits) appears on 955 US grants and 1,022 published applications in this corpus.
Search patents in G11C- Granted patents
- 955
- Published applications
- 1,022
- Assignees
- 181
- Inventors
- 1,278
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1996 | 1 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 2 | 0 |
| 2000 | 1 | 0 |
| 2001 | 4 | 2 |
| 2002 | 8 | 7 |
| 2003 | 20 | 42 |
| 2004 | 29 | 17 |
| 2005 | 23 | 27 |
| 2006 | 16 | 11 |
| 2007 | 10 | 6 |
| 2008 | 10 | 10 |
| 2009 | 9 | 26 |
| 2010 | 11 | 28 |
| 2011 | 22 | 23 |
| 2012 | 19 | 20 |
| 2013 | 30 | 27 |
| 2014 | 37 | 25 |
| 2015 | 23 | 47 |
| 2016 | 48 | 50 |
| 2017 | 49 | 50 |
| 2018 | 61 | 48 |
| 2019 | 69 | 82 |
| 2020 | 91 | 84 |
| 2021 | 77 | 80 |
| 2022 | 65 | 83 |
| 2023 | 56 | 77 |
| 2024 | 65 | 46 |
| 2025 | 67 | 69 |
| 2026 | 32 | 35 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Multilevel antiferromagnetic memory device29 Sep 2026US 12,749,519 B2Kioxia Corporation
- Bipolar decoders for nonvolatile memory with spike attenuation for threshold selector switches29 Sep 2026US 12,749,520 B2SanDisk Technologies LLC
- Magnetic memory device having magnetic tunnel junction patterns and spin-orbit torque lines22 Sep 2026US 12,744,068 B2Samsung Electronics Co., Ltd.
- Bipolar decoders for nonvolatile memory1 Sep 2026US 12,725,645 B2SanDisk Technologies LLC
- Magnetoresistive effect memory, memory array, and memory system25 Aug 2026US 12,718,857 B2Sony Semiconductor Solutions Corporation
- Midpoint sensing reference generation for stt-mram1 Oct 2026US 2026/0301788 A1Everspin Technologies, Inc.
- Memory device and operating method of the memory device17 Sep 2026US 2026/0279423 A1Samsung Electronics Co., Ltd.
- Semiconductor storage device13 Aug 2026US 2026/0237433 A1Kioxia Corporation
- Cross-point array leakage compensation6 Aug 2026US 2026/0229265 A1SanDisk Technologies LLC
- Storage device6 Aug 2026US 2026/0229286 A1Sony Semiconductor Solutions Corporation
Most cited
By later US patents
- Stacked 1T-nMTJ MRAM structure101US 6,882,566 B2Micron Technology, Inc. · 2005
- Small area magnetic memory devices95US 6,781,910 B2Hewlett-Packard Development Company, L. P. · 2004
- Close shaped magnetic multi-layer film comprising or not comprising a metal core and the manufacture method and the application of the same95US 7,936,595 B2Institute of Physics, Chinese Academy of Sciences · 2011
- Thin film magnetic memory device including memory cells having a magnetic tunnel junction92US 6,349,054 B1Mitsubishi Denki Kabushiki Kaisha · 2002
- Magnetic random access memory circuit82US 6,341,084 B22002