Small area magnetic memory devices
AssigneeHewlett-Packard Development Company, L.P.
InventorKenneth Kay Smith
Life of this patent
Estimating the term…
Abstract
The present disclosure relates to a magnetic memory device. In one embodiment, the magnetic memory device comprises a plurality of memory cells, and a plurality of write conductors adjacent the memory cells but electrically isolated from the memory cells, at least two of the write conductors being connected to a single shared switch, wherein the write conductors are configured to provide a path for current to flow to thereby generate magnetic fields used to change a state of the memory cells.
Claims19
A magnetic memory device, comprising:
- a plurality of memory cells;
- and
- a plurality of write conductors adjacent the memory cells but electrically isolated from the memory cells, at least two of the write conductors being connected to a single shared switch, wherein the write conductors are configured to provide a path for current to flow to thereby generate magnetic fields used to change a state of the memory cells.
A magnetic memory device, comprising:
- a plurality of memory cells arranged in a two dimensional array;
- a plurality of read/write conductors that are electrically coupled to the memory cells on a first side of the memory cells, the read/write conductors being configured to provide magnetic fields for the memory cells during writing and current flow to the memory cells during reading;
- a plurality of read conductors that are electrically coupled to the memory cells on a second side of the memory cells, the read conductors being configured to provide current flow to the memory cells during reading;
- and
- a plurality of write conductors adjacent the read conductors and electrically isolated from the memory cells, at least two of the write conductors being connected to a single shared transistor, wherein the write conductors are configured to generate magnetic fields for the memory cells during writing.
A magnetic memory device, comprising:
- a plurality of memory cells arranged in a two dimensional array;
- a first layer of read conductors that are electrically coupled to the memory cells on a first side of the memory cells, the read conductors being configured to provide read current to the memory cells;
- a first layer of write conductors adjacent the first layer of read conductors and electrically isolated from the memory cells, at least two of the write conductors being connected to a first shared transistor, wherein the write conductors are configured to generate magnetic fields for the memory cells;
- a second layer of re conductors that are electrically coupled to the memory cells on a second side of the memory cells;
- and
- a second layer of write conductors adjacent the second layer of read conductors and electrically isolated from the memory cells, at least two of the write conductors of the second layer being connected to a second shared transistor, wherein the write conductors of the second layer are configured to generate magnetic fields for the memory cells.
A magnetic memory device, comprising:
- a plurality of memory veils;
- and n write conductors, n being a positive integer, the n write conductors being positioned adjacent the memory cells but electrically isolated from the memory cells, the n write conductors being connected to (n+1) number of write transistors such that each write conductor comprises its own separate conductor and is further connected to a shared transistor.
A method for writing data to a memory cell of a magnetic memory device, comprising:
- providing a write voltage to a first end of a write conductor of the magnetic memory device with a first transistor, the write conductor being electrically isolated from the memory cell;
- connecting a second end of the write conductor to ground with a second transistor that is connected to at least one other write conductor of the magnetic memory device to create a first current path and a first magnetic field;
- and
- providing a write voltage to a separate conductor also connected to ground to create a second current path and a second magnetic field;
- wherein the first and second fields together change a state of the memory cell.
Dependencies are inferred from the claim text.