Magnetoresistive effect memory, memory array, and memory system

A memory array, comprising:

• a plurality of memory cells, wherein each of the plurality of memory cells includes a magnetoresistive effect element and a selection element, wherein
• the magnetoresistive effect element includes a voltage-controlled magnetic anisotropy effect layer, a non-voltage-controlled magnetic anisotropy effect layer, and a magnetization fixed layer,
• the voltage-controlled magnetic anisotropy effect layer is a first magnetization free layer,
• a magnetization direction of the voltage-controlled magnetic anisotropy effect layer is variable,
• the voltage-controlled magnetic anisotropy effect layer has a voltage-controlled magnetic anisotropy effect,
• the non-voltage-controlled magnetic anisotropy effect layer is a second magnetization free layer,
• a magnetization direction of the non-voltage-controlled magnetic anisotropy effect layer is variable,
• the non-voltage-controlled magnetic anisotropy effect layer is a layer without the voltage-controlled magnetic anisotropy effect,
• the magnetization fixed layer has a magnetic anisotropy,
• a magnetization direction of the magnetization fixed layer is invariable, and
• the selection element is configured to select the magnetoresistive effect element;
• a write circuit configured to perform writing to the magnetoresistive effect element of a first memory cell of the plurality of memory cells via the selection element of the first memory cell;
• and
• a read circuit configured to perform reading from the magnetoresistive effect element of a second memory cell of the plurality of memory cells via the selection element of the second memory cell.

A memory system, comprising:

• a plurality of memory cells, wherein each of the plurality of memory cells includes a magnetoresistive effect element and a selection element, wherein
• the magnetoresistive effect element includes a voltage-controlled magnetic anisotropy effect layer, a non-voltage-controlled magnetic anisotropy effect layer, and a magnetization fixed layer,
• the voltage-controlled magnetic anisotropy effect layer is a first magnetization free layer,
• a magnetization direction of the voltage-controlled magnetic anisotropy effect layer is variable,
• the voltage-controlled magnetic anisotropy effect layer has a voltage-controlled magnetic anisotropy effect,
• the non-voltage-controlled magnetic anisotropy effect layer is a second magnetization free layer,
• a magnetization direction of the non-voltage-controlled magnetic anisotropy effect layer is variable,
• the non-voltage-controlled magnetic anisotropy effect layer is a layer without the voltage-controlled magnetic anisotropy effect,
• the magnetization fixed layer has a magnetic anisotropy,
• a magnetization direction of the magnetization fixed layer is invariable, and
• the selection element is configured to select the magnetoresistive effect element;
• a write circuit configured to perform writing to the magnetoresistive effect element of a first memory cell of the plurality of memory cells via the selection element of the first memory cell;
• a read circuit configured to perform reading from the magnetoresistive effect element of a second memory cell of the plurality of memory cells via the selection element of the second memory cell;
• and
• a memory controller configured to control the writing via the write circuit and the reading via the read circuit.

A magnetoresistive effect memory, comprising:

• a magnetoresistive effect element, wherein the magnetoresistive effect element includes:
• a plurality of voltage-controlled magnetic anisotropy effect layers, wherein
• each of the plurality of voltage-controlled magnetic anisotropy effect layers is a magnetization free layer,
• a magnetization direction of each of the plurality of voltage-controlled magnetic anisotropy effect layers is variable, and
• each of the plurality of voltage-controlled magnetic anisotropy effect layers has a voltage-controlled magnetic anisotropy effect;
• and
• a magnetization fixed layer having a magnetic anisotropy, wherein a magnetization direction of the magnetization fixed layer is invariable.