Magnetic random access memory and method of manufacturing the same

A magnetic random access memory manufacturing method comprising:

• forming a switching element on a semiconductor substrate;
• forming a first wiring above the switching element;
• forming a top insulating film on the first wiring;
• forming a first side insulating film on side surfaces of the first wiring and the top insulating film;
• forming a first interlayer insulating film covering the first side insulating film and the top insulating film;
• exposing the top insulating film by planarizing the first interlayer insulating film;
• forming a contact hole which exposes a portion of the first side insulating film;
• forming, in the contact hole, a first contact connecting to the switching element;
• forming a second wiring on the first contact and the top insulating film to electrically connect the second wiring and the switching element;
• forming, on the second wiring, a magnetoresistive effect element having a fixed layer, a recording layer, and a nonmagnetic layer formed between the fixed layer and the recording layer;
• and
• forming a third wiring above the magnetoresistive effect element.

A magnetic random access memory manufacturing method comprising:

• forming a switching element on a semiconductor substrate;
• forming a first wiring above the switching element by a damascene process to form a first insulating film on side and bottom surfaces of the first wiring;
• forming a top insulating film on the first wiring and the first insulating film;
• forming a first interlayer insulating film covering the top insulating film;
• exposing the top insulating film by planarizing the first interlayer insulating film;
• forming a contact hole which exposes a portion of the first insulating film;
• forming, in the contact hole, a first contact connecting to the switching element;
• forming a second wiring on the first contact and the top insulating film to electrically connect the second wiring and the switching element;
• forming, on the second wiring, a magnetoresistive effect element having a fixed layer, a recording layer, and a nonmagnetic layer formed between the fixed layer and the recording layer;
• and
• forming a third wiring above the magnetoresistive effect element.