C23C 16/45502
Flow conditions in reaction chamber
Official title: {Flow conditions in reaction chamber}
C23C16/45502 (Flow conditions in reaction chamber) appears on 826 US grants and 1,079 published applications in this corpus.
Search patents in C23C- Granted patents
- 826
- Published applications
- 1,079
- Assignees
- 385
- Inventors
- 2,371
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 2 | 0 |
| 1978 | 1 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 2 | 0 |
| 1983 | 0 | 0 |
| 1984 | 3 | 0 |
| 1985 | 5 | 0 |
| 1986 | 0 | 0 |
| 1987 | 3 | 0 |
| 1988 | 6 | 0 |
| 1989 | 4 | 0 |
| 1990 | 9 | 0 |
| 1991 | 9 | 0 |
| 1992 | 14 | 0 |
| 1993 | 5 | 0 |
| 1994 | 12 | 0 |
| 1995 | 6 | 0 |
| 1996 | 11 | 0 |
| 1997 | 6 | 0 |
| 1998 | 18 | 0 |
| 1999 | 9 | 0 |
| 2000 | 17 | 0 |
| 2001 | 23 | 9 |
| 2002 | 17 | 18 |
| 2003 | 13 | 30 |
| 2004 | 6 | 22 |
| 2005 | 14 | 23 |
| 2006 | 11 | 15 |
| 2007 | 6 | 20 |
| 2008 | 8 | 30 |
| 2009 | 5 | 27 |
| 2010 | 11 | 39 |
| 2011 | 10 | 39 |
| 2012 | 23 | 37 |
| 2013 | 24 | 31 |
| 2014 | 28 | 38 |
| 2015 | 27 | 51 |
| 2016 | 29 | 53 |
| 2017 | 23 | 37 |
| 2018 | 25 | 59 |
| 2019 | 40 | 66 |
| 2020 | 47 | 55 |
| 2021 | 53 | 58 |
| 2022 | 56 | 86 |
| 2023 | 45 | 71 |
| 2024 | 45 | 65 |
| 2025 | 49 | 45 |
| 2026 | 44 | 55 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Apparatus for conducting plasma surface treatment, board treatment system having the same, and method of manufacturing semiconductor devices using the same6 Oct 2026US 12,755,942 B2New Power Plasma Co., Ltd.
- Substrate processing tube, substrate processing apparatus including the same, and substrate processing method using the apparatus29 Sep 2026US 12,747,497 B2Samsung Electronics Co., Ltd.
- Method and device for depositing an epitaxial layer on a substrate wafer made of semiconductor material8 Sep 2026US 12,729,441 B2Siltronic AG
- Wall-cooled gas-inlet element for a CVD reactor28 Jul 2026US 12,692,602 B2Aixtron SE
- Batch processing apparatus, systems, and related methods and structures for epitaxial deposition operations28 Jul 2026US 12,696,707 B2APPLIED Materials.Inc.
- Thin-film deposition apparatus and method8 Oct 2026US 2026/0308760 A1Picosun Oy
- Atomic layer deposition reaction chamber and an atomic layer deposition reactor1 Oct 2026US 2026/0297747 A1Beneq Oy
- A thin-film deposition apparatus for batch processing24 Sep 2026US 2026/0286515 A1Picosun Oy
- A thin-film deposition apparatus reaction chamber24 Sep 2026US 2026/0286520 A1Picosun Oy
- A thin-film deposition apparatus24 Sep 2026US 2026/0286525 A1Picosun Oy
Most cited
By later US patents
- CVD Processing chamber1,003US 5,558,717 AAPPLIED Materials.Inc. · 1996
- Method and equipment for growing thin films872US 5,711,811 AMikrokemia Oy · 1998
- Thermally floating pedestal collar in a chemical vapor deposition chamber805US 5,846,332 AAPPLIED Materials.Inc. · 1998
- Processing apparatus and method for plasma processing739US 5,134,965 AHitachi, Ltd. · 1992
- Induction heated pancake epitaxial reactor616US 5,062,386 AEpitaxy Systems, Inc. · 1991