Method and device for depositing an epitaxial layer on a substrate wafer made of semiconductor material
AssigneeSiltronic AG
InventorsThomas Stettner, Walter Edmaier
Life of this patent
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Abstract
A method deposits an epitaxial layer on a semiconductor substrate having a wedge-shaped cross section. The substrate is arranged in a deposition apparatus to rest concentrically on a susceptor held by a supporting shaft. The supporting shaft rotates with a time period. Deposition gas is passed over the substrate between a gas inlet and outlet. Flushing gas is passed along a lower side of a preheating ring and of the susceptor. The supporting shaft is displaced with the time period along a displacement path from a position where a thinner edge of the substrate has its smallest distance from the gas inlet, to where the thinner edge has its largest distance therefrom, and back.
Claims5
A method for depositing an epitaxial layer on a substrate wafer comprising semiconductor material, the substrate wafer having a wedge-shaped cross section with a thinner edge and a thicker edge, as compared to each other, the method comprising:
- arranging the substrate wafer and a susceptor in a deposition apparatus so that the substrate wafer rests concentrically on the susceptor, and so that the susceptor is held by a supporting shaft;
- rotating the supporting shaft with a time period;
- passing deposition gas over the substrate wafer in a direction from a gas inlet to a gas outlet;
- passing flushing gas with a flow rate along a lower side of a preheating ring and a lower side of the susceptor;
- and
- displacing the supporting shaft with the time period along a displacement path in a direction starting from an initial position, in which the thinner edge has its smallest distance from the gas inlet, to a final position in which the thinner edge has its largest distance from the gas inlet, and back to the initial position.
Dependencies are inferred from the claim text.