Batch processing apparatus, systems, and related methods and structures for epitaxial deposition operations

An apparatus for substrate processing, comprising:

• a chamber body comprising:
• a processing volume,
• a plurality of gas inject passages formed in the chamber body, the plurality of gas inject passages positioned as a plurality of inject levels, and the gas inject passages of each inject level comprising:
• one or more central gas openings,
• one or more first outer gas openings on a first side of the one or more central gas openings,
• one or more second outer gas openings on a second side of the one or more central gas openings
• one or more first intermediate gas openings between the one or more central gas openings and the one or more first outer gas openings, and
• one or more second intermediate gas openings between the one or more central gas openings and the one or more second outer gas openings and
• one or more gas exhaust passages formed in the chamber body opposite the plurality of gas inject passages;
• one or more heat sources configured to generate heat;
• a pedestal assembly positioned in the processing volume;
• and
• a flow guide structure positioned in the processing volume, the flow guide structure comprising:
• one or more first flow dividers that divide the processing volume into a plurality of flow levels, each inject level aligning with a respective flow level, and
• one or more second flow dividers oriented to intersect the one or more first flow dividers and divide each flow level of the plurality of flow levels into a plurality of flow sections, the gas inject passages of each inject level are open to an outermost flow section of the respective flow level.

An apparatus for substrate processing, comprising:

• a chamber body comprising:
• a processing volume,
• a plurality of gas inject passages formed in the chamber body and in fluid communication with the processing volume, and
• one or more gas exhaust passages formed in the chamber body opposite the plurality of gas inject passages, the one or more gas exhaust passages in fluid communication with the processing volume;
• and
• one or more heat sources configured to generate heat;
• a pedestal assembly positioned in the processing volume;
• and
• a cassette positioned in the processing volume and at least partially supported by the pedestal assembly, the cassette comprising:
• a plurality of levels arranged vertically with respect to each other, each level of the plurality of levels comprising a support surface configured to support a substrate, the plurality of levels comprising:
• a first level comprising a first arcuate support having a first inner ledge, the first inner ledge having a first support surface, and
• a second level comprising a second arcuate support having a second inner ledge, the second inner ledge having a second support surface, each of the first arcuate support and the second arcuate support is a ring or one or more ring segments, and
• a plurality of mount columns extending through the first arcuate support and the second arcuate support,
• wherein a first opening is on an outer side of the first arcuate support and a second opening is between the first arcuate support and the second arcuate support,
• wherein a level spacing between adjacent levels of the plurality of levels is 25 mm or higher, and the level spacing is defined between the support surfaces of the adjacent levels.