C23C 16/4408
By purging residual gases from the reaction chamber or gas lines
Official title: {by purging residual gases from the reaction chamber or gas lines}
C23C16/4408 (By purging residual gases from the reaction chamber or gas lines) appears on 610 US grants and 1,053 published applications in this corpus.
Search patents in C23C- Granted patents
- 610
- Published applications
- 1,053
- Assignees
- 260
- Inventors
- 2,364
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1990 | 1 | 0 |
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 1 | 0 |
| 1994 | 1 | 0 |
| 1995 | 1 | 0 |
| 1996 | 3 | 0 |
| 1997 | 2 | 0 |
| 1998 | 10 | 0 |
| 1999 | 4 | 0 |
| 2000 | 9 | 0 |
| 2001 | 17 | 6 |
| 2002 | 5 | 13 |
| 2003 | 11 | 18 |
| 2004 | 14 | 17 |
| 2005 | 9 | 10 |
| 2006 | 4 | 19 |
| 2007 | 2 | 18 |
| 2008 | 6 | 11 |
| 2009 | 10 | 19 |
| 2010 | 10 | 9 |
| 2011 | 12 | 11 |
| 2012 | 11 | 18 |
| 2013 | 6 | 11 |
| 2014 | 12 | 19 |
| 2015 | 13 | 31 |
| 2016 | 21 | 46 |
| 2017 | 27 | 50 |
| 2018 | 27 | 37 |
| 2019 | 35 | 44 |
| 2020 | 33 | 57 |
| 2021 | 32 | 59 |
| 2022 | 45 | 77 |
| 2023 | 44 | 99 |
| 2024 | 44 | 103 |
| 2025 | 74 | 139 |
| 2026 | 53 | 112 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method of forming a layer by ALD6 Oct 2026US 12,753,497 B2ASM IP Holding B. V.
- Flow control arrangements, semiconductor processing systems having flow control arrangements, and flow control methods6 Oct 2026US 12,753,499 B2ASM IP Holding B. V.
- Substrate processing apparatus and substrate processing method6 Oct 2026US 12,753,501 B2Tokyo Electron Limited
- Calorimetry method to measure chemical reaction heat in ALD/ALE processes using temperature-sensitive resistance coatings6 Oct 2026US 12,753,510 B2Uchicago Argonne, LLC
- Atomic layer deposition apparatus29 Sep 2026US 12,747,499 B2Beneq Oy
- Semiconductor process system and method of cleaning the same8 Oct 2026US 2026/0308756 A1Samsung Electronics Co., Ltd.
- Method of forming a structure using selective deposition on a metal surface1 Oct 2026US 2026/0297729 A1ASM IP Holding B. V.
- Gas supply line arrangements1 Oct 2026US 2026/0297736 A1Lam Research Corporation
- Substrate processing apparatus1 Oct 2026US 2026/0297737 A1Tokyo Electron Limited
- Substrate processing method, method of manufacturing semiconductor device, non-transitory computer-readable recording medium and substrate processing apparatus1 Oct 2026US 2026/0297740 A1Kokusai Electric Corporation
Most cited
By later US patents
- Method and apparatus to help promote contact of gas with vaporized material551US 8,444,120 B2Advanced Technology Materials, Inc. · 2013
- Apparatus for supporting a substrate in a reaction chamber544US 6,692,575 B1CVC Products, Inc. · 2004
- Film forming method, film forming apparatus, and storage medium469US 9,640,448 B2Tokyo Electron Limited · 2017
- Atomic layer deposition chamber with multi inject467US 9,175,394 B2APPLIED Materials.Inc. · 2015
- Method for chemical vapor deposition of semiconductor films by separate feeding of source gases and growing of films431US 5,728,425 AFujitsu Limited · 1998