Atomic layer deposition apparatus

An atomic layer deposition apparatus for processing a surface of a substrate successively with at least a first precursor and a second precursor according to principles of atomic layer deposition, the apparatus comprising:

• a substrate support having a support surface and arranged to support one or more substrates;
• a precursor supply head having an output face, the output face being provided with at least one reaction zone via which precursors are supplied;
• a process chamber having a process chamber space inside the process chamber, the substrate support and the precursor supply head being arranged inside the process chamber, the process chamber comprising a discharge connection provided to the process chamber and arranged to discharge gases from the process chamber space;
• and
• a rotating mechanism, the substrate support and the precursor supply head being arranged to be rotated relative to each other with the rotating mechanism such that the support surface of the substrate support and the output face of the precursor supply head are arranged to be rotated relative to each other,
• wherein the support surface of the substrate support and the output face of the precursor supply head are arranged opposite to each other such that a reaction gap is provided between the support surface of the substrate support and the output face of the precursor supply head,
• wherein the output face comprises two or more reaction zones,
• wherein each of the two or more reaction zones comprises:
• a precursor supply zone open to the output face of the precursor supply head for supplying precursor;
• a suction zone open to the output face of the precursor supply head and arranged to surround the precursor supply zone at the output face of the precursor supply head;
• and
• a purge gas supply zone open to the output face of the precursor supply head and arranged to surround the suction zone and the precursor supply zone at the output face of the precursor supply head;
• wherein the suction zone is arranged between the precursor supply zone and the purge gas supply zone at the output face of the precursor supply head, and
• wherein the precursor supply head comprises intermediate purge gas feeding nozzles for separating adjacent reaction zones from each other to further prevent precursor mixing between different reaction zones.