Method for chemical vapor deposition of semiconductor films by separate feeding of source gases and growing of films

A method for vapor phase deposition in a reactor chamber having a substrate therein comprising the following steps (a) through (e) in the order recited:

• (a) supplying a source gas in a vapor phase to the reactor chamber while the substrate is maintained at a temperature lower than a temperature at which vapor phase deposition occurs;
• (b) closing a gas-inlet and a gas-outlet for the source gas maintained in the vapor phase in the reactor chamber;
• (c) compressing a volume of the reactor chamber to pressurize the source gas in the vapor phase;
• (d) maintaining the source gas in the vapor phase for a period of time, while the reactor chamber is maintained at a constant volume, so that vapor pressure and density of the source gas are kept homogeneous throughout the reactor chamber;
• and
• (e) heating the substrate so that the vapor phase deposition on the substrate occurs.