C23C 14/351
Using a magnetic field in close vicinity to the substrate
Official title: {using a magnetic field in close vicinity to the substrate}
C23C14/351 (Using a magnetic field in close vicinity to the substrate) appears on 169 US grants and 206 published applications in this corpus.
Search patents in C23C- Granted patents
- 169
- Published applications
- 206
- Assignees
- 98
- Inventors
- 506
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 2 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 2 | 0 |
| 1990 | 2 | 0 |
| 1991 | 2 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 2 | 0 |
| 1996 | 1 | 0 |
| 1997 | 2 | 0 |
| 1998 | 1 | 0 |
| 1999 | 3 | 0 |
| 2000 | 6 | 0 |
| 2001 | 2 | 1 |
| 2002 | 5 | 2 |
| 2003 | 4 | 3 |
| 2004 | 4 | 3 |
| 2005 | 0 | 3 |
| 2006 | 1 | 3 |
| 2007 | 4 | 4 |
| 2008 | 0 | 1 |
| 2009 | 0 | 7 |
| 2010 | 3 | 5 |
| 2011 | 3 | 9 |
| 2012 | 3 | 9 |
| 2013 | 7 | 19 |
| 2014 | 5 | 13 |
| 2015 | 7 | 10 |
| 2016 | 11 | 7 |
| 2017 | 7 | 9 |
| 2018 | 6 | 8 |
| 2019 | 4 | 12 |
| 2020 | 5 | 7 |
| 2021 | 6 | 16 |
| 2022 | 9 | 24 |
| 2023 | 12 | 19 |
| 2024 | 16 | 5 |
| 2025 | 10 | 4 |
| 2026 | 9 | 3 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Sputtering apparatus29 Sep 2026US 12,749,665 B2Samsung Display Co., Ltd.
- Deposition apparatus28 Jul 2026US 12,692,591 B2Samsung Display Co., Ltd.
- Method of fabricating superconducting wire30 Jun 2026US 12,671,013 B2Faraday Factory Japan LLC
- Sputtering machines, substrate holders, and sputtering processes with magnetic biasing23 Jun 2026US 12,662,731 B2Virginia Commonwealth University
- Substrate treating apparatus and substrate treating method26 May 2026US 12,637,756 B2SCREEN Holdings Co., Ltd.
- Physical vapor deposition (pvd) having a high deposition rate without compromising film stress mitigation16 Jul 2026US 2026/0201543 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Sputter deposition source, magnetron sputter cathode, and method of depositing a material on a substrate28 May 2026US 2026/0146315 A1APPLIED Materials.Inc.
- Physical vapor deposition apparatus14 May 2026US 2026/0135070 A1Samsung Electronics Co., Ltd.
- Cathodic arc source6 Nov 2025US 2025/0340976 A1Oerlikon Surface Solutions AG, PfäFfikon
- Deposition apparatus9 Oct 2025US 2025/0313944 A1Samsung Display Co., Ltd.
Most cited
By later US patents
- Apparatus for producing a uniform magnetic field over a large surface area of a wafer157US 6,136,166 ARead-Rite Corporation · 2000
- Sputtering process and an apparatus for carrying out the same82US 4,853,102 AHitachi, Ltd. · 1989
- Method and apparatus for improving the uniformity ion bombardment in a magnetron sputtering system62US 4,871,433 AMaterials Research Corporation · 1989
- Method and apparatus to improve the side wall and bottom coverage in IMP process by using magnetic field60US 6,143,140 AAPPLIED Materials.Inc. · 2000
- Method and apparatus for increasing local plasma density in magnetically confined plasma54US 7,922,880 B1Novellus Systems, Inc. · 2011