Method and apparatus to improve the side wall and bottom coverage in IMP process by using magnetic field

An apparatus, comprising:

• (a) a processing chamber forming a cavity;
• (b) a target disposed in the cavity;
• (c) a substrate support member disposed in the cavity and having a support surface adapted to support a substrate;
• (d) an inductive coil disposed to provide a first magnetic field in the cavity that ionizes target material;
• (e) a second magnetic field generator disposed adjacent the processing chamber to provide a second magnetic field a portion of which is substantially parallel to the support surface;
• (f) one or more power sources coupled to the target, the substrate support member and the inductive coil;
• and
• (g) a gas source coupled to the processing chamber to supply a gas for generating a plasma in a processing region during processing.

A method for depositing a material onto a substrate, comprising:

• (a) sputtering a material from a target disposed in a vacuum chamber;
• (b) providing a first magnetic field for ionizing the material to generate charged particles by energizing a coil disposed proximate the vacuum chamber, wherein a first portion of the charged particles have a first polarity and a second portion of the charged particles have a second polarity;
• and
• (c) providing a second magnetic field in the vacuum chamber oriented substantially parallel to an upper surface of the substrate disposed in the vacuum chamber.

A method for depositing material onto a substrate, comprising:

• (a) sputtering material from a target disposed in a vacuum chamber;
• (b) providing a first magnetic field that ionizes target material by supplying power to a coil disposed proximate the vacuum chamber;
• and
• (c) modulating one or more secondary magnetic fields at least periodically oriented substantially parallel to an upper surface of a substrate disposed in the vacuum chamber.