Sputtering process and an apparatus for carrying out the same

A sputtering apparatus that includes a vacuum chamber for holding an inert gas comprises:

• first means for holding a target comprising film forming material wherein said target is disposed on a first side of said first means and wherein said first means comprises a cathode electrode;
• an anode electrode;
• second means, connected to said cathode electrode and said anode electrode, for generating an electric field;
• third means for producing a first magnetic field, wherein said third means comprises a target magnetic device disposed on a second side of said first means, opposite to said first side;
• fourth means for supporting a substrate wherein said fourth means comprises a supporting electrode;
• fifth means for producing a cusp magnetic field along the perimeter of said substrate in conjunction with said first magnetic field, wherein said fifth means comprises an outer magnetic device disposed around said fourth means;
• sixth means for producing a central magnetic field distributed substantially uniformly over a first surface of the substrate in conjunction with said first magnetic field, wherein said sixth means comprises an inner magnet disposed beneath said substrate;
• a seventh means for supplying a DC voltage to said first surface of said substrate wherein said seventh means comprises a bias voltage source;
• and
• means for controlling a temperature of said substrate.

A sputtering apparatus that includes a vacuum chamber for holding an inert gas comprises:

• first means for holding a target comprising film forming material wherein said target is disposed on a first side of said first means and wherein said first means comprises a cathode electrode;
• an anode electrode;
• second means, connected to said cathode electrode and said anode electrode, for generating an electric field;
• third means for producing a first magnetic field, wherein said third means comprises a target magnetic device disposed on a second side of said first means, opposite to said first side;
• fourth means for supporting a substrate wherein said fourth means comprises a supporting electrode;
• fifth means for producing a cusp magnetic field along the perimeter of said substrate in conjunction with said first magnetic field, wherein said fifth means comprises an outer magnetic device disposed around said fourth means;
• sixth means for producing a central magnetic field distributed substantially uniformly over a first surface of the substrate in conjunction with said first magnetic field, wherein said sixth means comprises an inner magnet disposed beneath said substrate;
• means for inducing a negative DC voltage on said first surface of said substrate wherein said means for inducing a negative DC voltage comprises a source of a high frequency voltage connected to said supporting electrode;
• and
• means for controlling a temperature of said substrate.

A sputtering apparatus that includes a vacuum chamber for holding an inert gas comprises:

• first means for holding a target comprising film forming material wherein said target is disposed on a first side of said first means and wherein said first means comprises a cathode electrode;
• an anode electrode;
• second means, connected to said cathode electrode and said anode electrode, for generating an electric field;
• third means for producing a first magnetic field, wherein said third means comprises a target magnetic device disposed on a second side of said first means, opposite to said first side;
• fourth means for supporting a substrate wherein said fourth means comprises a supporting electrode;
• fifth means for producing a cusp magnetic field along the perimeter of said substrate in conjunction with said first magnetic field, wherein said fifth means comprises an outer magnetic device disposed around said fourth means;
• sixth means for producing a central magnetic field distributed substantially uniformly over a first surface of the substrate in conjunction with said first magnetic field, wherein said sixth means comprises an inner magnet disposed beneath said substrate;
• a seventh means for supplying a DC voltage to said first surface of said substrate wherein said seventh means comprises a bias voltage source;
• means for controlling a temperature of said substrate comprising means for supplying a temperature controlling gas between the substrate supporting electrode and the substrate;
• and
• means for maintaining said cathode electrode at a ground or floating potential, said means for maintaining comprising means for changing an electric power supplied by said second means to said cathode electrode whereby a sputter etching process can be obtained.