Physical vapor deposition (pvd) having a high deposition rate without compromising film stress mitigation

A method for operating a physical vapor deposition (PVD) system, the method comprising:

• placing a substrate on a substrate support disposed in a chamber body enclosing a processing region;
• applying, by a first direct current (DC) power supply electrically coupled to a PVD target, to provide a DC bias to the PVD target;
• generating a plasma by introducing a plasma-forming gas into the processing region;
• generating, by a radio frequency (RF) coil and an alternating current (AC) power supply electrically coupled to the RF coil, an electromagnetic field in the processing region, wherein the RF coil is disposed above the substrate support and below the PVD target, and the electromagnetic field sustains the plasma;
• and
• bombarding the PVD target with energetic ions from the plasma to deposit a material of the PVD target onto the substrate.

A physical vapor deposition (PVD) system comprising:

• a chamber body enclosing a processing region;
• a substrate support disposed in the chamber body;
• a PVD target disposed in the chamber body and over the substrate support;
• a magnet assembly disposed above the PVD target and configured to project a magnetic field in the processing region, wherein a surface magnetic field strength of the magnetic field is equal to or larger than 400 G;
• and
• a first direct current (DC) power supply electrically coupled to the PVD target to provide a DC bias to the PVD target.