Y10S 438/97
Specified etch stop material
Y10S438/97 (Specified etch stop material) appears on 254 US grants and 41 published applications in this corpus.
Search patents in Y10S- Granted patents
- 254
- Published applications
- 41
- Assignees
- 83
- Inventors
- 399
- Latest grant
- 22 Dec 2015
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 1 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 4 | 0 |
| 1987 | 3 | 0 |
| 1988 | 5 | 0 |
| 1989 | 1 | 0 |
| 1990 | 5 | 0 |
| 1991 | 9 | 0 |
| 1992 | 8 | 0 |
| 1993 | 11 | 0 |
| 1994 | 21 | 0 |
| 1995 | 22 | 0 |
| 1996 | 13 | 0 |
| 1997 | 21 | 0 |
| 1998 | 13 | 0 |
| 1999 | 16 | 0 |
| 2000 | 18 | 0 |
| 2001 | 25 | 5 |
| 2002 | 12 | 8 |
| 2003 | 7 | 3 |
| 2004 | 7 | 5 |
| 2005 | 2 | 6 |
| 2006 | 3 | 1 |
| 2007 | 7 | 5 |
| 2008 | 3 | 3 |
| 2009 | 3 | 0 |
| 2010 | 1 | 2 |
| 2011 | 3 | 0 |
| 2012 | 2 | 1 |
| 2013 | 0 | 1 |
| 2014 | 0 | 1 |
| 2015 | 3 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Sidewall free CESL for enlarging ILD gap-fill window22 Dec 2015US 9,218,974 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Sidewall-free CESL for enlarging ILD gap-fill window7 Apr 2015US 8,999,834 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated circuit having an edge passivation and oxidation resistant layer and method10 Mar 2015US 8,975,721 B2Infineon Technologies Austria AG
- Integrated circuit having an edge passivation and oxidation resistant layer and method28 Feb 2012US 8,125,036 B2Infineon Technologies Austria AG
- Method for an integrated circuit contact17 Jan 2012US 8,097,514 B2Round Rock Research, LLC
- Sidewall-free cesl for enlarging ild gap-fill window19 Jun 2014US 2014/0170846 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Sidewall-Free CESL for Enlarging ILD Gap-Fill Window17 Oct 2013US 2013/0270651 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated circuit having a semiconductor arrangement and method for producing it1 Mar 2012US 2012/0049325 A1Infineon Technologies Austria AG
- Sidewall-Free CESL for Enlarging ILD Gap-Fill Window16 Dec 2010US 2010/0314690 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method for an integrated circuit contact28 Jan 2010US 2010/0019388 A1Micron Technology, Inc.
Most cited
By later US patents
- Embedded ground plane and shielding structures using sidewall insulators in high frequency circuits having vias532US 5,414,221 AIntel Corporation · 1995
- Method of producing a thin silicon-on-insulator layer381US 5,013,681 AThe United States of America as represented by the Secretary of the Navy · 1991
- Reduced mask CMOS process for fabricating stacked capacitor multi-megabit dynamic random access memories utilizing single etch stop layer for contacts248US 5,292,677 AMicron Technology, Inc. · 1994
- Films doped with carbon for use in integrated circuit technology244US 6,462,371 B1Micron Technology, Inc. · 2002
- Methods of forming carbon-containing layers242US 6,251,802 B1Micron Technology, Inc. · 2001