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US 8,097,514 B2Granted
Method for an integrated circuit contact
AssigneeRound Rock Research, LLC
InventorsCharles H. Dennison, Trung T. Doan
Life of this patent
Estimating the term…
Abstract
A support material for a semiconductor device is processed. An opening having a width is etched into the support material for the semiconductor device using a first etch mask. A portion of the opening is etched using a second etch mask without alignment thereof to the width of the opening.
Claims5
A method for processing a support material for a semiconductor device, comprising:
- etching an opening having a width into the support material for the semiconductor device using a first etch mask;
- and
- etching a portion of the opening using a second etch mask without alignment thereof to the width of the opening,
- wherein the first etch mask comprises a first etch mask material over the support material, the second etch mask comprises a second etch mask material over the first etch mask and over the support material, the second etch mask comprises a second etch mask material made of a resist material and the first etch mask material comprises a first etch mask made of a non-resist material, and the first etch mask comprises a first etch mask material consisting of silicon nitride, titanium oxide and aluminum oxide.
1 more element
A semiconductor device in a manufacturing process, the semiconductor device having a portion comprising:
- an insulating layer having a first opening, the first opening having a first length and a first width and having a second opening located below a portion of the first opening and communicating with the first opening without being aligned to the first width of the first opening, the second opening having a second length less than the first length of said first opening and a second width being one of at least equal to the first width of the first opening and greater than the first width of the first opening;
- an etch stop layer located over the insulating layer serving as part of a completed semiconductor device, the etch stop layer defining a third opening located above the first opening communicating with the first opening, the third opening having a third length at least equal to the first length of the first opening and a third width being one of at least equal to the first width of the first opening and greater than the first width of the first opening, and
- an adhesion layer lining the first, second, and third openings.
Dependencies are inferred from the claim text.