Integrated circuit having a semiconductor arrangement and method for producing it

A method for producing an integrated circuit having a semiconductor component arrangement, comprising:

• forming a semiconductor material region having a surface region;
• forming an arrangement of one or more semiconductor components in a central region of the semiconductor material region;
• forming a passivation layer region on the surface region of the semiconductor material region in an edge region thereof, the passivation layer region being configured to realize a field distribution at the edge of the semiconductor component arrangement, wherein the passivation layer region is formed with a base layer including hydrogen containing amorphous carbon at the bottom and directly adjoining the semiconductor material region;
• forming an oxide layer region as a protection against oxidation on and in direct contact with the surface region of the semiconductor material region in the edge region;
• forming the passivation layer region between the oxide layer region and the central region;
• forming the oxide layer region or a part of the oxide layer region in direct contact with one or more channel stopper regions, a channel stopper region being formed as a doped zone or as a plurality of doped zones of a first conductivity type in the surface region of the semiconductor material region;
• and
• forming a doped zone or a VLD zone having a varying doping of a second conductivity type, namely one that decreases toward the edge of the semiconductor material region, in the surface region of the semiconductor material region in the transition between the central region and the edge region of the semiconductor material region, the doped zone or VLD zone reaching as far as the one or more channel stopper regions.