Method for an integrated circuit contact

A method for forming an oxide layer in an electronic circuit comprising:

• etching the oxide layer through openings in a first plurality of etch guide layers over the oxide layer forming an opening in the oxide layer having a width;
• and
• etching the oxide layer through openings in a second plurality of etch guide layers over the oxide layer without aligning a mask to the width of the opening in the oxide layer.

A semiconductor device in a manufacturing process, the semiconductor device having a portion comprising:

• an insulating layer having a first opening, the first opening having a first length and a first width and having a second opening located below a portion of the first opening communicating with the first opening, the second opening having a second length less than the first length of said first opening and a second width being one of at least equal to the first width of the first opening and greater than the first width of the first opening;
• and
• an etch stop layer located over the insulating layer serving as part of a completed semiconductor device, the etch stop layer defining a third opening located above the first opening communicating with the first opening, the third opening having a third length at least equal to the first length of the first opening and a third width being one of at least equal to the first width of the first opening and greater than the first width of the first opening.