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US 2010/0314690 A1Published application
Sidewall-Free CESL for Enlarging ILD Gap-Fill Window
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHan-Pin Chung, Bor Chiuan Hsieh, Shiang-Bau Wang, Hun-Jan Tao
Life of this patent
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Abstract
An integrated circuit structure includes a first gate strip; a gate spacer on a sidewall of the first gate strip; and a contact etch stop layer (CESL) having a bottom portion lower than a top surface of the gate spacer, wherein a portion of a sidewall of the gate spacer has no CESL formed thereon.
Claims16
An integrated circuit structure comprising:
- a first gate strip;
- a gate spacer on a sidewall of the first gate strip;
- and
- a contact etch stop layer (CESL) comprising a bottom portion lower than a top surface of the gate spacer, wherein a portion of a sidewall of the gate spacer has no CESL formed thereon.
1 more element
An integrated circuit structure comprising:
- a first conductive strip;
- a first spacer on a sidewall of the first conductive strip;
- a second conductive strip;
- a second spacer on a sidewall of the second conductive strip;
- a gap between the first spacer and the second spacer;
- and
- a contact etch stop layer (CESL) comprising:
- a top portion directly over the first conductive strip;
- and
- a bottom portion in the gap and disconnected from the top portion, wherein a sidewall of the first spacer does not have any portion of the CESL formed thereon.
7 more elements
Dependencies are inferred from the claim text.